Research of reactive ion and plasma-chemical etching effect on diamond coating surface morphology; AIP Conference Proceedings; Vol. 1772 : Prospects of Fundamental Sciences Development (PFSD-2016)
| Parent link: | AIP Conference Proceedings Vol. 1772 : Prospects of Fundamental Sciences Development (PFSD-2016).— 2016.— [040007, 5 p.] |
|---|---|
| Автор: | |
| Співавтор: | |
| Інші автори: | , |
| Резюме: | Title screen The effect of treatment by reactive ion etching in an argon atmosphere, and hydrogen plasma etching in a glow discharge plasma on the surface of the diamond films was investigated. Diamond films were deposited by the Chemical Vapor Deposition method on the hard alloy VK-8 substrates. The crystallites direction under the influence of argon ion beam processing was changed by 45 degrees from the original. The surface morphology becomes more developed (an average value of 20%) by etching in a glow discharge plasma in an atmosphere of hydrogen. Raman spectroscopy, Scanning Electron Microscope and Atomic Force Microscopy were used to determine the phase and microstructure composition of deposited films. Режим доступа: по договору с организацией-держателем ресурса |
| Мова: | Англійська |
| Опубліковано: |
2016
|
| Серія: | High energy processes and external exposure of materials |
| Предмети: | |
| Онлайн доступ: | http://dx.doi.org/10.1063/1.4964566 http://earchive.tpu.ru/handle/11683/35005 |
| Формат: | Електронний ресурс Частина з книги |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=652125 |
| Резюме: | Title screen The effect of treatment by reactive ion etching in an argon atmosphere, and hydrogen plasma etching in a glow discharge plasma on the surface of the diamond films was investigated. Diamond films were deposited by the Chemical Vapor Deposition method on the hard alloy VK-8 substrates. The crystallites direction under the influence of argon ion beam processing was changed by 45 degrees from the original. The surface morphology becomes more developed (an average value of 20%) by etching in a glow discharge plasma in an atmosphere of hydrogen. Raman spectroscopy, Scanning Electron Microscope and Atomic Force Microscopy were used to determine the phase and microstructure composition of deposited films. Режим доступа: по договору с организацией-держателем ресурса |
|---|---|
| DOI: | 10.1063/1.4964566 |