The fast neutron irradiation influence on the AlGaAs IR-LEDs reliability; Microelectronics Reliability; Vol. 65

The fast neutron irradiation influence on the AlGaAs IR-LEDs reliability; Microelectronics Reliability; Vol. 65

Xehetasun bibliografikoak
Parent link:Microelectronics Reliability
Vol. 65.— 2016.— [P. 55-59]
Erakunde egilea: Национальный исследовательский Томский политехнический университет Юргинский технологический институт (филиал) Кафедра безопасности жизнедеятельности, экологии и физического воспитания
Beste egile batzuk: Gradoboev A. V. Aleksandr Vasilyevich, Orlova K. N. Kseniya Nikolaevna, Asanov I. A. Ivan Aleksandrovich, Simonova A. V. Anastasiya Vladimirovna
Gaia:Title screen
This paper represents the results of investigation of preliminary fast neutron irradiation influence on reliability of IR-LEDs manufactured on the basis of AlGaAs heterostructures. It is determined that design margin of LEDs is defined by catastrophic failures that are driven by mechanical destruction of LED packages rather than their lighting technology characteristics. The upper and lower limits of catastrophic failure probability are determined. In addition, the upper limit is shown to be dependent on the melt temperature of ohmic contact used to fix the chip to chip carrier. The preliminary fast neutron irradiation leads to the shift of defined temperature limits while the probability of catastrophic failure grows with neutron fluence that can be explained by lower radiation resistance of ohmic contact.
Hizkuntza:ingelesa
Argitaratua: 2016
Gaiak:
электронный ресурс
труды учёных ТПУ
светоизлучающие диоды
гетероструктуры
быстрые нейтроны
Sarrera elektronikoa:http://dx.doi.org/10.1016/j.microrel.2016.07.143
Formatua: Baliabide elektronikoa Liburu kapitulua
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=651544

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