Effects of Doped Oxygen on ZnWO[4] Crystal Luminescence; Key Engineering Materials; Vol. 712 : Advanced Materials for Technical and Medical Purpose (AMTMP 2016)

Effects of Doped Oxygen on ZnWO[4] Crystal Luminescence; Key Engineering Materials; Vol. 712 : Advanced Materials for Technical and Medical Purpose (AMTMP 2016)

Détails bibliographiques
Parent link:	Key Engineering Materials: Scientific Journal Vol. 712 : Advanced Materials for Technical and Medical Purpose (AMTMP 2016).— 2016.— [P. 345-350]
Collectivités auteurs:	Национальный исследовательский Томский политехнический университет (ТПУ) Институт физики высоких технологий (ИФВТ) Кафедра лазерной и световой техники (ЛиСТ), Национальный исследовательский Томский политехнический университет (ТПУ) Институт физики высоких технологий (ИФВТ) Кафедра материаловедения и технологии металлов (МТМ)
Autres auteurs:	Lisitsyn V. M. Viktor Mikhailovich, Karipbayev Z. T. Zhakyp, Lisitsyna L. A. Ludmila, Dauletbekova A. K. Alma, Tupitsyna I. A. Irina, Akilbekov A. T. Abdirash, Zdorovets M. V. Maxim
Résumé:	Title screen The results of the study of the spectral characteristics and photo cathodoluminescence zinc tungstate crystals subjected to heat treatment in an oxygen atmosphere, or flows of high-energy irradiation of oxygen ions. It was observed that additional introduction of oxygen leads to decline in luminescence’s effectiveness. It was discovered, that introduction of oxygen by thermal processing leads to changes in excitation spectrum. Decline of excitation effectiveness proportional to increase of excitation quanta energy from 4.5 to 6.5 eV was observed; in the meantime, in the unprocessed crystals it declined by only 25-30%. The effect can be explained by destruction of complex defects with luminescence centers during introduction of additional oxygen. It was demonstrated, that characteristic oxygen’s depth of entry during thermal processing is 20 nm. Режим доступа: по договору с организацией-держателем ресурса
Langue:	anglais
Publié:	2016
Collection:	Materials and Technologies in Optoelectronics Production
Sujets:	электронный ресурс труды учёных ТПУ легирование кислород кристаллы люминесценция дефекты катодолюминесценция нанодефекты вольфрамат цинка
Accès en ligne:	http://dx.doi.org/10.4028/www.scientific.net/KEM.712.345
Format:	Électronique Chapitre de livre
KOHA link:	https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=651359

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