Aluminum films deposition by magnetron sputtering systems: Influence of target state and pulsing unit

Aluminum films deposition by magnetron sputtering systems: Influence of target state and pulsing unit

Detalhes bibliográficos
Parent link:Journal of Physics: Conference Series
Vol. 741 : Optoelectronics, Photonics, Engineering and Nanostructures (Saint Petersburg OPEN 2016).— 2016.— [012193, 5 p.]
Autor Corporativo: Национальный исследовательский Томский политехнический университет (ТПУ) Физико-технический институт (ФТИ) Кафедра экспериментальной физики (ЭФ)
Outros Autores: Sidelev D. V. Dmitry Vladimirovich, Yuryeva A. V. Alena Victorovna, Krivobokov V. P. Valery Pavlovich, Shabunin A. S. Artem Sergeevich, Syrtanov M. S. Maksim Sergeevich, Koyshybaeva Z. K. Zhanymgul Koyshybaykyzy
Resumo:Title screen
This article reports on technological possibilities of magnetron sputtering systems with solid-state and liquid-phase targets to deposition of aluminum films and its structure. The comparison of deposition rates of magnetron sputtering systems with direct current (DC), midfrequency (MF) and high power pulsed (HiPIMS) supplies is shown. The optical emission spectroscopy indicates a high component of target material ions in discharge gap only to HiPIMS technique. Al films are a (111)-line oriented in DC and MF power supply cases, for high power pulsed unit - aluminum films also have intense (220)-line. The dependence of grain sizes and sputtering technique parameters is obtained.
Publicado em: 2016
Assuntos:
электронный ресурс
труды учёных ТПУ
магнетронные распылительные системы
пленки
алюминий
жидкофазные мишени
магнетронное напыление
эмиссионная спектроскопия
Acesso em linha:http://dx.doi.org/10.1088/1742-6596/741/1/012193
Formato: Recurso Electrónico Capítulo de Livro
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=651259

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