Aluminum films deposition by magnetron sputtering systems: Influence of target state and pulsing unit
| Parent link: | Journal of Physics: Conference Series Vol. 741 : Optoelectronics, Photonics, Engineering and Nanostructures (Saint Petersburg OPEN 2016).— 2016.— [012193, 5 p.] |
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| Korporativní autor: | |
| Další autoři: | , , , , , |
| Shrnutí: | Title screen This article reports on technological possibilities of magnetron sputtering systems with solid-state and liquid-phase targets to deposition of aluminum films and its structure. The comparison of deposition rates of magnetron sputtering systems with direct current (DC), midfrequency (MF) and high power pulsed (HiPIMS) supplies is shown. The optical emission spectroscopy indicates a high component of target material ions in discharge gap only to HiPIMS technique. Al films are a (111)-line oriented in DC and MF power supply cases, for high power pulsed unit - aluminum films also have intense (220)-line. The dependence of grain sizes and sputtering technique parameters is obtained. |
| Jazyk: | angličtina |
| Vydáno: |
2016
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| Témata: | |
| On-line přístup: | http://dx.doi.org/10.1088/1742-6596/741/1/012193 |
| Médium: | Elektronický zdroj Kapitola |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=651259 |
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| 200 | 1 | |a Aluminum films deposition by magnetron sputtering systems: Influence of target state and pulsing unit |f D. V. Sidelev [et al.] | |
| 203 | |a Text |c electronic | ||
| 300 | |a Title screen | ||
| 320 | |a [References: 13 tit.] | ||
| 330 | |a This article reports on technological possibilities of magnetron sputtering systems with solid-state and liquid-phase targets to deposition of aluminum films and its structure. The comparison of deposition rates of magnetron sputtering systems with direct current (DC), midfrequency (MF) and high power pulsed (HiPIMS) supplies is shown. The optical emission spectroscopy indicates a high component of target material ions in discharge gap only to HiPIMS technique. Al films are a (111)-line oriented in DC and MF power supply cases, for high power pulsed unit - aluminum films also have intense (220)-line. The dependence of grain sizes and sputtering technique parameters is obtained. | ||
| 461 | 1 | |0 (RuTPU)RU\TPU\network\3526 |t Journal of Physics: Conference Series | |
| 463 | 1 | |t Vol. 741 : Optoelectronics, Photonics, Engineering and Nanostructures (Saint Petersburg OPEN 2016) |o 3rd International School and Conference, 28–30 March 2016, St Petersburg, Russia |o [proceedings] |v [012193, 5 p.] |d 2016 | |
| 610 | 1 | |a электронный ресурс | |
| 610 | 1 | |a труды учёных ТПУ | |
| 610 | 1 | |a магнетронные распылительные системы | |
| 610 | 1 | |a пленки | |
| 610 | 1 | |a алюминий | |
| 610 | 1 | |a жидкофазные мишени | |
| 610 | 1 | |a магнетронное напыление | |
| 610 | 1 | |a эмиссионная спектроскопия | |
| 701 | 1 | |a Sidelev |b D. V. |c physicist |c engineer of Tomsk Polytechnic University |f 1991- |g Dmitry Vladimirovich |3 (RuTPU)RU\TPU\pers\34524 |9 17905 | |
| 701 | 1 | |a Yuryeva |b A. V. |c specialist in the field of hydrogen energy and plasma technologies |c Associate Professor of Tomsk Polytechnic University, Candidate of Technical Sciences |f 1983- |g Alena Victorovna |3 (RuTPU)RU\TPU\pers\33389 |9 17084 | |
| 701 | 1 | |a Krivobokov |b V. P. |c Russian physicist |c professor of Tomsk Polytechnic University (TPU), Doctor of Physical and Mathematical Sciences (DSc) |f 1948- |g Valery Pavlovich |3 (RuTPU)RU\TPU\pers\30416 |9 14757 | |
| 701 | 1 | |a Shabunin |b A. S. |c Physicist |c Engineer of Tomsk Polytechnic University |f 1987- |g Artem Sergeevich |3 (RuTPU)RU\TPU\pers\37139 | |
| 701 | 1 | |a Syrtanov |b M. S. |c physicist |c Associate Professor, Researcher of Tomsk Polytechnic University, Candidate of Technical Sciences |f 1990- |g Maksim Sergeevich |3 (RuTPU)RU\TPU\pers\34764 |9 18114 | |
| 701 | 1 | |a Koyshybaeva |b Z. K. |g Zhanymgul Koyshybaykyzy | |
| 712 | 0 | 2 | |a Национальный исследовательский Томский политехнический университет (ТПУ) |b Физико-технический институт (ФТИ) |b Кафедра экспериментальной физики (ЭФ) |3 (RuTPU)RU\TPU\col\21255 |
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