Aluminum films deposition by magnetron sputtering systems: Influence of target state and pulsing unit; Journal of Physics: Conference Series; Vol. 741 : Optoelectronics, Photonics, Engineering and Nanostructures (Saint Petersburg OPEN 2016)

Aluminum films deposition by magnetron sputtering systems: Influence of target state and pulsing unit; Journal of Physics: Conference Series; Vol. 741 : Optoelectronics, Photonics, Engineering and Nanostructures (Saint Petersburg OPEN 2016)

Xehetasun bibliografikoak
Parent link:Journal of Physics: Conference Series
Vol. 741 : Optoelectronics, Photonics, Engineering and Nanostructures (Saint Petersburg OPEN 2016).— 2016.— [012193, 5 p.]
Erakunde egilea: Национальный исследовательский Томский политехнический университет (ТПУ) Физико-технический институт (ФТИ) Кафедра экспериментальной физики (ЭФ)
Beste egile batzuk: Sidelev D. V. Dmitry Vladimirovich, Yuryeva A. V. Alena Victorovna, Krivobokov V. P. Valery Pavlovich, Shabunin A. S. Artem Sergeevich, Syrtanov M. S. Maksim Sergeevich, Koyshybaeva Z. K. Zhanymgul Koyshybaykyzy
Gaia:Title screen
This article reports on technological possibilities of magnetron sputtering systems with solid-state and liquid-phase targets to deposition of aluminum films and its structure. The comparison of deposition rates of magnetron sputtering systems with direct current (DC), midfrequency (MF) and high power pulsed (HiPIMS) supplies is shown. The optical emission spectroscopy indicates a high component of target material ions in discharge gap only to HiPIMS technique. Al films are a (111)-line oriented in DC and MF power supply cases, for high power pulsed unit - aluminum films also have intense (220)-line. The dependence of grain sizes and sputtering technique parameters is obtained.
Hizkuntza:ingelesa
Argitaratua: 2016
Gaiak:
электронный ресурс
труды учёных ТПУ
магнетронные распылительные системы
пленки
алюминий
жидкофазные мишени
магнетронное напыление
эмиссионная спектроскопия
Sarrera elektronikoa:http://dx.doi.org/10.1088/1742-6596/741/1/012193
Formatua: Baliabide elektronikoa Liburu kapitulua
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=651259
Deskribapena
Gaia:Title screen
This article reports on technological possibilities of magnetron sputtering systems with solid-state and liquid-phase targets to deposition of aluminum films and its structure. The comparison of deposition rates of magnetron sputtering systems with direct current (DC), midfrequency (MF) and high power pulsed (HiPIMS) supplies is shown. The optical emission spectroscopy indicates a high component of target material ions in discharge gap only to HiPIMS technique. Al films are a (111)-line oriented in DC and MF power supply cases, for high power pulsed unit - aluminum films also have intense (220)-line. The dependence of grain sizes and sputtering technique parameters is obtained.
DOI:10.1088/1742-6596/741/1/012193

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