Comparative study of Cu films prepared by DC, high power pulsed and burst magnetron sputtering
| Parent link: | Journal of Electronic Materials Vol. 45, iss. 8.— 2016.— [P. 4052–4060] |
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| 団体著者: | |
| その他の著者: | , , , , |
| 要約: | Title screen A comparative study of deposition rate, adhesion, structural and electrical properties of nanocrystalline copper thin films deposited using direct current magnetron sputtering (DCMS) and different regimes of high power pulsed magnetron sputtering is presented. High-power impulse magnetron sputtering (HIPIMS) and burst regime (pulse packages) of magnetron sputtering are investigated. The ion and atomic flows toward the growing film during magnetron sputtering of a Cu target are determined. X-ray diffraction, scanning electron microscopy and atomic force microscopy were used to observe the structural characterization of the films. The resistivity of the films was measured using four-point probe technique. In all sputtering regimes, Cu films have mixture crystalline orientations of [111], [200], [311] and [220] in the direction of the film growth. As peak power density in studied deposition regimes was different in order of magnitude (from 15 W/cm2 in DC regime to 3700 W/cm2 in HIPIMS), film properties were also greatly different. DCMS Cu films exhibit a porous columnar grain structure. In contrast, HIPIMS Cu films have a slightly columnar and denser composition. Cu films deposited using burst regimes at peak power density of 415 W cm?2 and ion-to-atom ratio of about 5 have the densest composition and smallest electrical resistance. Режим доступа: по договору с организацией-держателем ресурса |
| 言語: | 英語 |
| 出版事項: |
2016
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| 主題: | |
| オンライン･アクセス: | http://dx.doi.org/10.1007/s11664-016-4582-6 |
| フォーマット: | 電子媒体 図書の章 |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=650951 |
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| 200 | 1 | |a Comparative study of Cu films prepared by DC, high power pulsed and burst magnetron sputtering |f A. A. Soloviev [et al.] | |
| 203 | |a Text |c electronic | ||
| 300 | |a Title screen | ||
| 320 | |a [References: p. 4060 (34 tit.)] | ||
| 330 | |a A comparative study of deposition rate, adhesion, structural and electrical properties of nanocrystalline copper thin films deposited using direct current magnetron sputtering (DCMS) and different regimes of high power pulsed magnetron sputtering is presented. High-power impulse magnetron sputtering (HIPIMS) and burst regime (pulse packages) of magnetron sputtering are investigated. The ion and atomic flows toward the growing film during magnetron sputtering of a Cu target are determined. X-ray diffraction, scanning electron microscopy and atomic force microscopy were used to observe the structural characterization of the films. The resistivity of the films was measured using four-point probe technique. In all sputtering regimes, Cu films have mixture crystalline orientations of [111], [200], [311] and [220] in the direction of the film growth. As peak power density in studied deposition regimes was different in order of magnitude (from 15 W/cm2 in DC regime to 3700 W/cm2 in HIPIMS), film properties were also greatly different. DCMS Cu films exhibit a porous columnar grain structure. In contrast, HIPIMS Cu films have a slightly columnar and denser composition. Cu films deposited using burst regimes at peak power density of 415 W cm?2 and ion-to-atom ratio of about 5 have the densest composition and smallest electrical resistance. | ||
| 333 | |a Режим доступа: по договору с организацией-держателем ресурса | ||
| 461 | |t Journal of Electronic Materials | ||
| 463 | |t Vol. 45, iss. 8 |v [P. 4052–4060] |d 2016 | ||
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| 701 | 1 | |a Soloviev (Solovyev) |b A. A. |c specialist in the field of hydrogen energy |c Associate Professor of Tomsk Polytechnic University, Candidate of technical sciences |f 1977- |g Andrey Aleksandrovich |3 (RuTPU)RU\TPU\pers\30863 |9 15109 | |
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| 701 | 1 | |a Rabotkin |b S. V. |g Sergey Viktorovich | |
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