In-service change in radiant power of infrared LEDs; Control and Communications (SIBCON)
| Parent link: | Control and Communications (SIBCON).— 2016.— [5 p.] |
|---|---|
| Glavni autor: | |
| Autori kompanije: | , |
| Daljnji autori: | , |
| Sažetak: | Title screen At present infrared light emitting diodes are used in diverse scanning and optical security systems of nuclear and power plants. The purpose of work is research reducing radiant power during step-by-step accelerated test at higher ambient temperature. The objects of research are infrared light emitting diodes based on dual AlGaAs heterostructures. Two-stage reduction of radiant power has been revealed: first, it is decreased since the original defect structure is rearranged during the operating time; second, new structural defects appear during the further operating time. Moreover, devices are divided into three characteristic groups in view of the second stage, which probably have the same defect with three quasi-stationary states. We assume origination of this defect is caused by production technology of light emitting diodes. Режим доступа: по договору с организацией-держателем ресурса |
| Jezik: | engleski |
| Izdano: |
2016
|
| Teme: | |
| Online pristup: | http://dx.doi.org/10.1109/SIBCON.2016.7491662 |
| Format: | Elektronički Poglavlje knjige |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=650711 |
MARC
| LEADER | 00000naa0a2200000 4500 | ||
|---|---|---|---|
| 001 | 650711 | ||
| 005 | 20250903133601.0 | ||
| 035 | |a (RuTPU)RU\TPU\network\15960 | ||
| 035 | |a RU\TPU\network\15959 | ||
| 090 | |a 650711 | ||
| 100 | |a 20161017d2016 k||y0engy50 ba | ||
| 101 | 0 | |a eng | |
| 135 | |a drcn ---uucaa | ||
| 181 | 0 | |a i | |
| 182 | 0 | |a b | |
| 200 | 1 | |a In-service change in radiant power of infrared LEDs |f A. V. Gradoboev, A. V. Simonova, K. N. Orlova | |
| 203 | |a Text |c electronic | ||
| 300 | |a Title screen | ||
| 320 | |a [References: 12 tit.] | ||
| 330 | |a At present infrared light emitting diodes are used in diverse scanning and optical security systems of nuclear and power plants. The purpose of work is research reducing radiant power during step-by-step accelerated test at higher ambient temperature. The objects of research are infrared light emitting diodes based on dual AlGaAs heterostructures. Two-stage reduction of radiant power has been revealed: first, it is decreased since the original defect structure is rearranged during the operating time; second, new structural defects appear during the further operating time. Moreover, devices are divided into three characteristic groups in view of the second stage, which probably have the same defect with three quasi-stationary states. We assume origination of this defect is caused by production technology of light emitting diodes. | ||
| 333 | |a Режим доступа: по договору с организацией-держателем ресурса | ||
| 463 | |t Control and Communications (SIBCON) |o Proceedings of the XII International Siberian Conference, Moscow, May 12-14, 2016 |v [5 p.] |d 2016 | ||
| 610 | 1 | |a электронный ресурс | |
| 610 | 1 | |a труды учёных ТПУ | |
| 610 | 1 | |a инфракрасные светоизлучающие диоды | |
| 610 | 1 | |a светодиоды | |
| 610 | 1 | |a дефекты | |
| 700 | 1 | |a Gradoboev |b A. V. |c physicist |c Professor of Yurga technological Institute of Tomsk Polytechnic University, Doctor of technical sciences |f 1952- |g Aleksandr Vasilyevich |3 (RuTPU)RU\TPU\pers\34242 |9 17773 | |
| 701 | 1 | |a Simonova |b A. V. |g Anastasiya Vladimirovna | |
| 701 | 1 | |a Orlova |b K. N. |c physicist |c Associate Professor of Yurga technological Institute of Tomsk Polytechnic University, Candidate of technical sciences |f 1985- |g Kseniya Nikolaevna |3 (RuTPU)RU\TPU\pers\33587 |9 17245 | |
| 712 | 0 | 2 | |a Национальный исследовательский Томский политехнический университет (ТПУ) |b Юргинский технологический институт (филиал) (ЮТИ) |b Кафедра сварочного производства (КСП) |3 (RuTPU)RU\TPU\col\18891 |
| 712 | 0 | 2 | |a Национальный исследовательский Томский политехнический университет (ТПУ) |b Юргинский технологический институт (филиал) (ЮТИ) |b Кафедра безопасности жизнедеятельности, экологии и физического воспитания (БЖДЭФВ) |3 (RuTPU)RU\TPU\col\18930 |
| 801 | 2 | |a RU |b 63413507 |c 20161017 |g RCR | |
| 856 | 4 | |u http://dx.doi.org/10.1109/SIBCON.2016.7491662 | |
| 942 | |c CF | ||