The regularities of radiation defect formation at the interface metal -n-InP; Control and Communications (SIBCON)

The regularities of radiation defect formation at the interface metal -n-InP; Control and Communications (SIBCON)

Bibliographic Details
Parent link:Control and Communications (SIBCON).— 2016.— [4 p.]
Main Author: Soboleva E. G. Elvira Gomerovna
Corporate Author: Национальный исследовательский Томский политехнический университет (ТПУ) Юргинский технологический институт (филиал) (ЮТИ) Кафедра сварочного производства (КСП)
Other Authors: Litvinenko V. V. Viktoriya Vladimirovna, Krit T. B. Timofey Borisovich
Summary:Title screen
New regularities in radiation defects formation in the space charge region were established for indium phosphide with application of the method of deep level transient spectroscopy. The given regulations differ markedly from the regulations in the neutral region. The authors develop physical models of these processes and their mathematical description. They also work out new concepts of the processes of radiation defects formation in indium phosphide based on taking into account charge states of defects and their recharge dynamics.
Режим доступа: по договору с организацией-держателем ресурса
Language:English
Published: 2016
Subjects:
электронный ресурс
труды учёных ТПУ
радиационные дефекты
фосфиды
спектроскопия
Online Access:http://dx.doi.org/10.1109/SIBCON.2016.7491677
Format: Electronic Book Chapter
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=650710

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