The regularities of radiation defect formation at the interface metal -n-InP; Control and Communications (SIBCON)

The regularities of radiation defect formation at the interface metal -n-InP; Control and Communications (SIBCON)

Podrobná bibliografie
Parent link:Control and Communications (SIBCON).— 2016.— [4 p.]
Hlavní autor: Soboleva E. G. Elvira Gomerovna
Korporativní autor: Национальный исследовательский Томский политехнический университет (ТПУ) Юргинский технологический институт (филиал) (ЮТИ) Кафедра сварочного производства (КСП)
Další autoři: Litvinenko V. V. Viktoriya Vladimirovna, Krit T. B. Timofey Borisovich
Shrnutí:Title screen
New regularities in radiation defects formation in the space charge region were established for indium phosphide with application of the method of deep level transient spectroscopy. The given regulations differ markedly from the regulations in the neutral region. The authors develop physical models of these processes and their mathematical description. They also work out new concepts of the processes of radiation defects formation in indium phosphide based on taking into account charge states of defects and their recharge dynamics.
Режим доступа: по договору с организацией-держателем ресурса
Jazyk:angličtina
Vydáno: 2016
Témata:
электронный ресурс
труды учёных ТПУ
радиационные дефекты
фосфиды
спектроскопия
On-line přístup:http://dx.doi.org/10.1109/SIBCON.2016.7491677
Médium: Elektronický zdroj Kapitola
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=650710

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