The regularities of radiation defect formation at the interface metal -n-InP; Control and Communications (SIBCON)

The regularities of radiation defect formation at the interface metal -n-InP; Control and Communications (SIBCON)

Bibliografski detalji
Parent link:	Control and Communications (SIBCON).— 2016.— [4 p.]
Glavni autor:	Soboleva E. G. Elvira Gomerovna
Autor kompanije:	Национальный исследовательский Томский политехнический университет (ТПУ) Юргинский технологический институт (филиал) (ЮТИ) Кафедра сварочного производства (КСП)
Daljnji autori:	Litvinenko V. V. Viktoriya Vladimirovna, Krit T. B. Timofey Borisovich
Sažetak:	Title screen New regularities in radiation defects formation in the space charge region were established for indium phosphide with application of the method of deep level transient spectroscopy. The given regulations differ markedly from the regulations in the neutral region. The authors develop physical models of these processes and their mathematical description. They also work out new concepts of the processes of radiation defects formation in indium phosphide based on taking into account charge states of defects and their recharge dynamics. Режим доступа: по договору с организацией-держателем ресурса
Jezik:	engleski
Izdano:	2016
Teme:	электронный ресурс труды учёных ТПУ радиационные дефекты фосфиды спектроскопия
Online pristup:	http://dx.doi.org/10.1109/SIBCON.2016.7491677
Format:	Elektronički Poglavlje knjige
KOHA link:	https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=650710

Internet

http://dx.doi.org/10.1109/SIBCON.2016.7491677