The regularities of radiation defect formation at the interface metal -n-InP; Control and Communications (SIBCON)

The regularities of radiation defect formation at the interface metal -n-InP; Control and Communications (SIBCON)

Opis bibliograficzny
Parent link:	Control and Communications (SIBCON).— 2016.— [4 p.]
1. autor:	Soboleva E. G. Elvira Gomerovna
Korporacja:	Национальный исследовательский Томский политехнический университет (ТПУ) Юргинский технологический институт (филиал) (ЮТИ) Кафедра сварочного производства (КСП)
Kolejni autorzy:	Litvinenko V. V. Viktoriya Vladimirovna, Krit T. B. Timofey Borisovich
Streszczenie:	Title screen New regularities in radiation defects formation in the space charge region were established for indium phosphide with application of the method of deep level transient spectroscopy. The given regulations differ markedly from the regulations in the neutral region. The authors develop physical models of these processes and their mathematical description. They also work out new concepts of the processes of radiation defects formation in indium phosphide based on taking into account charge states of defects and their recharge dynamics. Режим доступа: по договору с организацией-держателем ресурса
Język:	angielski
Wydane:	2016
Hasła przedmiotowe:	электронный ресурс труды учёных ТПУ радиационные дефекты фосфиды спектроскопия
Dostęp online:	http://dx.doi.org/10.1109/SIBCON.2016.7491677
Format:	MixedMaterials Elektroniczne Rozdział
KOHA link:	https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=650710

Internet

http://dx.doi.org/10.1109/SIBCON.2016.7491677