The regularities of radiation defect formation at the interface metal -n-InP; Control and Communications (SIBCON)
| Parent link: | Control and Communications (SIBCON).— 2016.— [4 p.] |
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| Zusammenfassung: | Title screen New regularities in radiation defects formation in the space charge region were established for indium phosphide with application of the method of deep level transient spectroscopy. The given regulations differ markedly from the regulations in the neutral region. The authors develop physical models of these processes and their mathematical description. They also work out new concepts of the processes of radiation defects formation in indium phosphide based on taking into account charge states of defects and their recharge dynamics. Режим доступа: по договору с организацией-держателем ресурса |
| Sprache: | Englisch |
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2016
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| Online-Zugang: | http://dx.doi.org/10.1109/SIBCON.2016.7491677 |
| Format: | MixedMaterials Elektronisch Buchkapitel |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=650710 |