The regularities of radiation defect formation at the interface metal -n-InP; Control and Communications (SIBCON)

The regularities of radiation defect formation at the interface metal -n-InP; Control and Communications (SIBCON)

Dades bibliogràfiques
Parent link:Control and Communications (SIBCON).— 2016.— [4 p.]
Autor principal: Soboleva E. G. Elvira Gomerovna
Autor corporatiu: Национальный исследовательский Томский политехнический университет (ТПУ) Юргинский технологический институт (филиал) (ЮТИ) Кафедра сварочного производства (КСП)
Altres autors: Litvinenko V. V. Viktoriya Vladimirovna, Krit T. B. Timofey Borisovich
Sumari:Title screen
New regularities in radiation defects formation in the space charge region were established for indium phosphide with application of the method of deep level transient spectroscopy. The given regulations differ markedly from the regulations in the neutral region. The authors develop physical models of these processes and their mathematical description. They also work out new concepts of the processes of radiation defects formation in indium phosphide based on taking into account charge states of defects and their recharge dynamics.
Режим доступа: по договору с организацией-держателем ресурса
Idioma:anglès
Publicat: 2016
Matèries:
электронный ресурс
труды учёных ТПУ
радиационные дефекты
фосфиды
спектроскопия
Accés en línia:http://dx.doi.org/10.1109/SIBCON.2016.7491677
Format: Electrònic Capítol de llibre
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=650710

Internet

http://dx.doi.org/10.1109/SIBCON.2016.7491677

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