The regularities of radiation defect formation at the interface metal -n-InP
| Parent link: | Control and Communications (SIBCON): Proceedings of the XII International Siberian Conference, Moscow, May 12-14, 2016. [4 p.].— , 2016 |
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| Autor principal: | |
| Autor Corporativo: | |
| Otros Autores: | , |
| Sumario: | Title screen New regularities in radiation defects formation in the space charge region were established for indium phosphide with application of the method of deep level transient spectroscopy. The given regulations differ markedly from the regulations in the neutral region. The authors develop physical models of these processes and their mathematical description. They also work out new concepts of the processes of radiation defects formation in indium phosphide based on taking into account charge states of defects and their recharge dynamics. Режим доступа: по договору с организацией-держателем ресурса |
| Lenguaje: | inglés |
| Publicado: |
2016
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| Materias: | |
| Acceso en línea: | http://dx.doi.org/10.1109/SIBCON.2016.7491677 |
| Formato: | Electrónico Capítulo de libro |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=650710 |
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| 200 | 1 | |a The regularities of radiation defect formation at the interface metal -n-InP |f E. G. Soboleva, V. V. Litvinenko, T. B. Krit | |
| 203 | |a Text |c electronic | ||
| 300 | |a Title screen | ||
| 320 | |a [References: 10 tit.] | ||
| 330 | |a New regularities in radiation defects formation in the space charge region were established for indium phosphide with application of the method of deep level transient spectroscopy. The given regulations differ markedly from the regulations in the neutral region. The authors develop physical models of these processes and their mathematical description. They also work out new concepts of the processes of radiation defects formation in indium phosphide based on taking into account charge states of defects and their recharge dynamics. | ||
| 333 | |a Режим доступа: по договору с организацией-держателем ресурса | ||
| 463 | |t Control and Communications (SIBCON) |o Proceedings of the XII International Siberian Conference, Moscow, May 12-14, 2016 |v [4 p.] |d 2016 | ||
| 610 | 1 | |a электронный ресурс | |
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| 610 | 1 | |a радиационные дефекты | |
| 610 | 1 | |a фосфиды | |
| 610 | 1 | |a спектроскопия | |
| 700 | 1 | |a Soboleva |b E. G. |c physicist |c Associate Professor of Yurga technological Institute of Tomsk Polytechnic University, Candidate of physical and mathematical Sciences |f 1976- |g Elvira Gomerovna |3 (RuTPU)RU\TPU\pers\32994 |9 16839 | |
| 701 | 1 | |a Litvinenko |b V. V. |g Viktoriya Vladimirovna | |
| 701 | 1 | |a Krit |b T. B. |g Timofey Borisovich | |
| 712 | 0 | 2 | |a Национальный исследовательский Томский политехнический университет (ТПУ) |b Юргинский технологический институт (филиал) (ЮТИ) |b Кафедра сварочного производства (КСП) |3 (RuTPU)RU\TPU\col\18891 |
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