Planar channelling of relativistic electrons in half-wave silicon crystal and corresponding radiation; Journal of Physics: Conference Series; Vol. 732 : Radiation from Relativistic Electrons in Periodic Structures (RREPS2015)

Planar channelling of relativistic electrons in half-wave silicon crystal and corresponding radiation; Journal of Physics: Conference Series; Vol. 732 : Radiation from Relativistic Electrons in Periodic Structures (RREPS2015)

Bibliographic Details
Parent link:Journal of Physics: Conference Series
Vol. 732 : Radiation from Relativistic Electrons in Periodic Structures (RREPS2015).— 2016.— [012036, 8 p.]
Corporate Author: Национальный исследовательский Томский политехнический университет (ТПУ) Физико-технический институт (ФТИ) Кафедра экспериментальной физики (ЭФ)
Other Authors: Takabayashi Yu. Yushi, Bagrov V. G. Vladislav Gavriilovich, Bogdanov O. V. Oleg Viktorovich, Pivovarov Yu. L. Yuriy Leonidovich, Tukhfatullin T. A. Timur Ahatovich
Summary:Title screen
New experimental data on planar channeling of 255 MeV electrons in a 0.74 nm Si Half-Wave Crystal (HWC) obtained at SAGA-LS facility are presented. The computer simulation showed that the angular distribution of electrons after penetration through the HWC revealed the number of unknown before peculiarities is connected with specific electron trajectories in HWC. These specific trajectories lead to specific radiation, the properties of which are analyzed.
Language:English
Published: 2016
Series:Monochromatic X- and Gamma Beams Produced at Electron Accelerators
Subjects:
электронный ресурс
труды учёных ТПУ
кристаллы
кремний
релятивистские электроны
каналирование
Online Access:http://dx.doi.org/10.1088/1742-6596/732/1/012036
http://earchive.tpu.ru/handle/11683/33966
Format: Electronic Book Chapter
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=650698

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