Planar channelling of relativistic electrons in half-wave silicon crystal and corresponding radiation

Planar channelling of relativistic electrons in half-wave silicon crystal and corresponding radiation

Detaylı Bibliyografya
Parent link:	Journal of Physics: Conference Series Vol. 732 : Radiation from Relativistic Electrons in Periodic Structures (RREPS2015).— 2016.— [012036, 8 p.]
Müşterek Yazar:	Национальный исследовательский Томский политехнический университет (ТПУ) Физико-технический институт (ФТИ) Кафедра экспериментальной физики (ЭФ)
Diğer Yazarlar:	Takabayashi Yu. Yushi, Bagrov V. G. Vladislav Gavriilovich, Bogdanov O. V. Oleg Viktorovich, Pivovarov Yu. L. Yuriy Leonidovich, Tukhfatullin T. A. Timur Ahatovich
Özet:	Title screen New experimental data on planar channeling of 255 MeV electrons in a 0.74 nm Si Half-Wave Crystal (HWC) obtained at SAGA-LS facility are presented. The computer simulation showed that the angular distribution of electrons after penetration through the HWC revealed the number of unknown before peculiarities is connected with specific electron trajectories in HWC. These specific trajectories lead to specific radiation, the properties of which are analyzed.
Baskı/Yayın Bilgisi:	2016
Seri Bilgileri:	Monochromatic X- and Gamma Beams Produced at Electron Accelerators
Konular:	электронный ресурс труды учёных ТПУ кристаллы кремний релятивистские электроны каналирование
Online Erişim:	http://dx.doi.org/10.1088/1742-6596/732/1/012036 http://earchive.tpu.ru/handle/11683/33966
Materyal Türü:	Elektronik Kitap Bölümü
KOHA link:	https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=650698

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