Planar channelling of relativistic electrons in half-wave silicon crystal and corresponding radiation; Journal of Physics: Conference Series; Vol. 732 : Radiation from Relativistic Electrons in Periodic Structures (RREPS2015)

Planar channelling of relativistic electrons in half-wave silicon crystal and corresponding radiation; Journal of Physics: Conference Series; Vol. 732 : Radiation from Relativistic Electrons in Periodic Structures (RREPS2015)

Bibliografische gegevens
Parent link:	Journal of Physics: Conference Series Vol. 732 : Radiation from Relativistic Electrons in Periodic Structures (RREPS2015).— 2016.— [012036, 8 p.]
Coauteur:	Национальный исследовательский Томский политехнический университет (ТПУ) Физико-технический институт (ФТИ) Кафедра экспериментальной физики (ЭФ)
Andere auteurs:	Takabayashi Yu. Yushi, Bagrov V. G. Vladislav Gavriilovich, Bogdanov O. V. Oleg Viktorovich, Pivovarov Yu. L. Yuriy Leonidovich, Tukhfatullin T. A. Timur Ahatovich
Samenvatting:	Title screen New experimental data on planar channeling of 255 MeV electrons in a 0.74 nm Si Half-Wave Crystal (HWC) obtained at SAGA-LS facility are presented. The computer simulation showed that the angular distribution of electrons after penetration through the HWC revealed the number of unknown before peculiarities is connected with specific electron trajectories in HWC. These specific trajectories lead to specific radiation, the properties of which are analyzed.
Taal:	Engels
Gepubliceerd in:	2016
Reeks:	Monochromatic X- and Gamma Beams Produced at Electron Accelerators
Onderwerpen:	электронный ресурс труды учёных ТПУ кристаллы кремний релятивистские электроны каналирование
Online toegang:	http://dx.doi.org/10.1088/1742-6596/732/1/012036 http://earchive.tpu.ru/handle/11683/33966
Formaat:	Elektronisch Hoofdstuk
KOHA link:	https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=650698

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