Planar channelling of relativistic electrons in half-wave silicon crystal and corresponding radiation; Journal of Physics: Conference Series; Vol. 732 : Radiation from Relativistic Electrons in Periodic Structures (RREPS2015)

Dettagli Bibliografici
Parent link:Journal of Physics: Conference Series
Vol. 732 : Radiation from Relativistic Electrons in Periodic Structures (RREPS2015).— 2016.— [012036, 8 p.]
Ente Autore: Национальный исследовательский Томский политехнический университет (ТПУ) Физико-технический институт (ФТИ) Кафедра экспериментальной физики (ЭФ)
Altri autori: Takabayashi Yu. Yushi, Bagrov V. G. Vladislav Gavriilovich, Bogdanov O. V. Oleg Viktorovich, Pivovarov Yu. L. Yuriy Leonidovich, Tukhfatullin T. A. Timur Ahatovich
Riassunto:Title screen
New experimental data on planar channeling of 255 MeV electrons in a 0.74 nm Si Half-Wave Crystal (HWC) obtained at SAGA-LS facility are presented. The computer simulation showed that the angular distribution of electrons after penetration through the HWC revealed the number of unknown before peculiarities is connected with specific electron trajectories in HWC. These specific trajectories lead to specific radiation, the properties of which are analyzed.
Lingua:inglese
Pubblicazione: 2016
Serie:Monochromatic X- and Gamma Beams Produced at Electron Accelerators
Soggetti:
Accesso online:http://dx.doi.org/10.1088/1742-6596/732/1/012036
http://earchive.tpu.ru/handle/11683/33966
Natura: Elettronico Capitolo di libro
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=650698