Deposition of the low resistive ITO-films by means of reactive magnetron sputtering of the In/Sn target on the cold substrate

Dades bibliogràfiques
Parent link:IOP Conference Series: Materials Science and Engineering
Vol. 135 : Issues of Physics and Technology in Science, Industry and Medicine.— 2016.— [012055, 5 p.]
Autor corporatiu: Национальный исследовательский Томский политехнический университет (ТПУ) Физико-технический институт (ФТИ) Кафедра теоретической и экспериментальной физики (ТиЭФ)
Altres autors: Zhidik Y. S., Troyan P. E., Baturina E. V., Korzhenko D. V. Dmitry Vladimirovich, Yuriev Yu. N. Yuri Nikolaevich
Sumari:Title screen
Detailed information on the deposition technology of the low-resistive ITO-films in oxygen-containing media by magnetron reactive sputtering from the In(90%)/Sn(10%) target on the cold substrate is given. Developed technology allows deposition ITO-films with sheet resistance transparency higher than 90%. Developed technology is notable for high reproducibility of results and is compatible with production technology of semiconductor devices of optoelectronics.
Publicat: 2016
Matèries:
Accés en línia:http://dx.doi.org/10.1088/1757-899X/135/1/012055
http://earchive.tpu.ru/handle/11683/34846
Format: Electrònic Capítol de llibre
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=650344