Deposition of the low resistive ITO-films by means of reactive magnetron sputtering of the In/Sn target on the cold substrate
| Parent link: | IOP Conference Series: Materials Science and Engineering Vol. 135 : Issues of Physics and Technology in Science, Industry and Medicine.— 2016.— [012055, 5 p.] |
|---|---|
| Corporate Author: | Национальный исследовательский Томский политехнический университет (ТПУ) Физико-технический институт (ФТИ) Кафедра теоретической и экспериментальной физики (ТиЭФ) |
| Other Authors: | Zhidik Y. S., Troyan P. E., Baturina E. V., Korzhenko D. V. Dmitry Vladimirovich, Yuriev Yu. N. Yuri Nikolaevich |
| Summary: | Title screen Detailed information on the deposition technology of the low-resistive ITO-films in oxygen-containing media by magnetron reactive sputtering from the In(90%)/Sn(10%) target on the cold substrate is given. Developed technology allows deposition ITO-films with sheet resistance transparency higher than 90%. Developed technology is notable for high reproducibility of results and is compatible with production technology of semiconductor devices of optoelectronics. |
| Language: | English |
| Published: |
2016
|
| Subjects: | |
| Online Access: | http://dx.doi.org/10.1088/1757-899X/135/1/012055 http://earchive.tpu.ru/handle/11683/34846 |
| Format: | Electronic Book Chapter |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=650344 |
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