Studying radiation hardness of a cadmium tungstate crystal based radiation detector; IOP Conference Series: Materials Science and Engineering; Vol. 135 : Issues of Physics and Technology in Science, Industry and Medicine
| Parent link: | IOP Conference Series: Materials Science and Engineering Vol. 135 : Issues of Physics and Technology in Science, Industry and Medicine.— 2016.— [012042, 6 p.] |
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| Nhiều tác giả của công ty: | , , |
| Tác giả khác: | , , , , , |
| Tóm tắt: | Title screen The given article considers radiation hardness of an X-ray detector used in production of non-destructive testing instruments and inspection systems. In the course of research, experiments were carried out to estimate radiation hardness of a detector based on cadmium tungstate crystal and its structural components individually. The article describes a layout of an experimental facility that was used for measurements of radiation hardness. The radiation dose dependence of the photodiode current is presented, when it is excited by a light flux of a scintillator or by an external light source. Experiments were carried out to estimate radiation hardness of two types of optical glue used in detector production; they are based on silicon rubber and epoxy. With the help of a spectrophotometer and cobalt gun, each of the glue samples was measured for a relative light transmission factor with different wavelengths, depending on the radiation dose. The obtained data are presented in a comprehensive analysis of the results. It was determined, which of the glue samples is most suitable for production of detectors working under exposure to strong radiation. |
| Ngôn ngữ: | Tiếng Anh |
| Được phát hành: |
2016
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| Những chủ đề: | |
| Truy cập trực tuyến: | http://dx.doi.org/10.1088/1757-899X/135/1/012042 http://earchive.tpu.ru/handle/11683/34832 |
| Định dạng: | Điện tử Chương của sách |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=650325 |
MARC
| LEADER | 00000nla2a2200000 4500 | ||
|---|---|---|---|
| 001 | 650325 | ||
| 005 | 20241122140238.0 | ||
| 035 | |a (RuTPU)RU\TPU\network\15543 | ||
| 035 | |a RU\TPU\network\15541 | ||
| 090 | |a 650325 | ||
| 100 | |a 20161003a2016 k y0engy50 ba | ||
| 101 | 0 | |a eng | |
| 102 | |a GB | ||
| 105 | |a y z 100zy | ||
| 135 | |a drcn ---uucaa | ||
| 181 | 0 | |a i | |
| 182 | 0 | |a b | |
| 200 | 1 | |a Studying radiation hardness of a cadmium tungstate crystal based radiation detector |f M. M. Shtein [et al.] | |
| 203 | |a Text |c electronic | ||
| 300 | |a Title screen | ||
| 320 | |a [References: 6 tit.] | ||
| 330 | |a The given article considers radiation hardness of an X-ray detector used in production of non-destructive testing instruments and inspection systems. In the course of research, experiments were carried out to estimate radiation hardness of a detector based on cadmium tungstate crystal and its structural components individually. The article describes a layout of an experimental facility that was used for measurements of radiation hardness. The radiation dose dependence of the photodiode current is presented, when it is excited by a light flux of a scintillator or by an external light source. Experiments were carried out to estimate radiation hardness of two types of optical glue used in detector production; they are based on silicon rubber and epoxy. With the help of a spectrophotometer and cobalt gun, each of the glue samples was measured for a relative light transmission factor with different wavelengths, depending on the radiation dose. The obtained data are presented in a comprehensive analysis of the results. It was determined, which of the glue samples is most suitable for production of detectors working under exposure to strong radiation. | ||
| 461 | 0 | |0 (RuTPU)RU\TPU\network\2008 |t IOP Conference Series: Materials Science and Engineering | |
| 463 | 0 | |0 (RuTPU)RU\TPU\network\15011 |t Vol. 135 : Issues of Physics and Technology in Science, Industry and Medicine |o VIII International Scientific Conference, 1–3 June 2016, Tomsk, Russia |o [proceedings] |v [012042, 6 p.] |d 2016 | |
| 610 | 1 | |a электронный ресурс | |
| 610 | 1 | |a труды учёных ТПУ | |
| 610 | 1 | |a радиационная стойкость | |
| 610 | 1 | |a детекторы | |
| 610 | 1 | |a вольфрамат кадмия | |
| 610 | 1 | |a рентгеновские излучения | |
| 610 | 1 | |a неразрушающий контроль | |
| 701 | 1 | |a Shtein |b M. M. |c Physicist |c Head of Laboratory at Tomsk Polytechnic University, Candidate of technical sciences |f 1938- |g Mikhail Mikhailovich |3 (RuTPU)RU\TPU\pers\31482 | |
| 701 | 1 | |a Smekalin |b L. F. |c physicist |c leading engineer of Tomsk Polytechnic University |f 1958- |g Leonid Fedorovich |3 (RuTPU)RU\TPU\pers\37371 | |
| 701 | 1 | |a Stepanov |b S. A. |c specialist in the field of lightning engineering |c Engineer of Tomsk Polytechnic University |f 1986- |g Sergey Aleksandrovich |3 (RuTPU)RU\TPU\pers\33771 |9 17369 | |
| 701 | 1 | |a Zatonov |b I. A. |c specialist in the field of electronics |c Electronic engineer, assistant of the Tomsk Polytechnic University |f 1995- |g Ivan Andreevich |3 (RuTPU)RU\TPU\pers\36674 |9 19713 | |
| 701 | 1 | |a Tkacheva |b T. V. | |
| 701 | 1 | |a Usachev |b E. Yu. | |
| 712 | 0 | 2 | |a Национальный исследовательский Томский политехнический университет (ТПУ) |b Институт неразрушающего контроля (ИНК) |b Лаборатория № 43 (Разработки малогабаритных бетатронов) |3 (RuTPU)RU\TPU\col\21336 |
| 712 | 0 | 2 | |a Национальный исследовательский Томский политехнический университет (ТПУ) |b Институт неразрушающего контроля (ИНК) |b Лаборатория № 51 (Радиационных испытаний материалов и изделий) |3 (RuTPU)RU\TPU\col\19294 |
| 712 | 0 | 2 | |a Национальный исследовательский Томский политехнический университет (ТПУ) |b Институт физики высоких технологий (ИФВТ) |b Кафедра лазерной и световой техники (ЛиСТ) |3 (RuTPU)RU\TPU\col\18690 |
| 801 | 2 | |a RU |b 63413507 |c 20170120 |g RCR | |
| 856 | 4 | |u http://dx.doi.org/10.1088/1757-899X/135/1/012042 | |
| 856 | 4 | |u http://earchive.tpu.ru/handle/11683/34832 | |
| 942 | |c CF | ||