Simulation of the Sample Alignment Process for the White Beam Tomography

Bibliographic Details
Parent link:IOP Conference Series: Materials Science and Engineering
Vol. 142 : Innovative Technologies in Engineering.— 2016.— [012039, 8 p.]
Main Author: Ozdiev A. H. Ali Hosenovich
Corporate Author: Национальный исследовательский Томский политехнический университет (ТПУ) Физико-технический институт (ФТИ) Кафедра общей физики (ОФ)
Other Authors: Liventsov S. N. Sergey Nikolaevich
Summary:Title screen
Nowadays growth of synthetic crystals is a very prospective direction of research activity. However, it is well known that in synthesized crystals there are still many defects and the main idea is to synthesize crystal of ideal form and structure. But in purpose to remove defects first you have to characterize them. This paper describes the method for the characterization of such defects and mainly concentrates on the problem of sample alignment procedure, offering the way to avoid misalignments.
Language:English
Published: 2016
Subjects:
Online Access:http://dx.doi.org/10.1088/1757-899X/142/1/012039
http://earchive.tpu.ru/handle/11683/34693
Format: Electronic Book Chapter
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=650121

MARC

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330 |a Nowadays growth of synthetic crystals is a very prospective direction of research activity. However, it is well known that in synthesized crystals there are still many defects and the main idea is to synthesize crystal of ideal form and structure. But in purpose to remove defects first you have to characterize them. This paper describes the method for the characterization of such defects and mainly concentrates on the problem of sample alignment procedure, offering the way to avoid misalignments. 
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