Pulsed cathodoluminescence and Raman spectra of MoS2 and WS2 nanocrystals and their combination MoS2/WS2 produced by self-propagating high-temperature synthesis; Applied Physics Letters; Vol. 108, iss. 9
| Parent link: | Applied Physics Letters.— , 1962- Vol. 108, iss. 9.— 2016.— [093111, 5 p.] |
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| Autor corporatiu: | , |
| Altres autors: | , |
| Sumari: | Title screen Molybdenum and tungsten disulfide nanoplates were produced by self-propagating high-temperature synthesis in argon atmosphere. This method provides an easy way to produce MoS2 and WS2 from nanoplates up to single- and several layers. The Raman peak intensities corresponding to in-plane E12g and out-of-plane A1g vibration modes and their shifts strongly depend on the thicknesses of the MoS2 and WS2 platelets indicating size-dependent scaling laws and properties. An electron beam irradiation of MoS2 and WS2powders leads to an occurrence of pulsed cathodoluminescence (PCL) spectra at 575?nm (2.15?eV) and 550?nm (2.25?eV) characteristic to their intrinsic band gaps. For the combination of MoS2 and WS2nanopowders, a PCL shoulder at 430?nm (2.88?eV) was observed, which is explained by the radiative electron-hole recombination at the MoS2/WS2grain boundaries. The luminescence decay kinetics of the MoS2/WS2 nanoplates appears to be slower than for individual MoS2 and WS2 platelets due to a spatial separation of electrons and holes at MoS2/WS2 junction resulting in extension of recombination time. Режим доступа: по договору с организацией-держателем ресурса |
| Idioma: | anglès |
| Publicat: |
2016
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| Matèries: | |
| Accés en línia: | http://dx.doi.org/10.1063/1.4943144 |
| Format: | xMaterials Electrònic Capítol de llibre |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=649662 |
MARC
| LEADER | 00000naa0a2200000 4500 | ||
|---|---|---|---|
| 001 | 649662 | ||
| 005 | 20250306145234.0 | ||
| 035 | |a (RuTPU)RU\TPU\network\14824 | ||
| 090 | |a 649662 | ||
| 100 | |a 20160801d2016 k||y0rusy50 ba | ||
| 101 | 0 | |a eng | |
| 102 | |a US | ||
| 135 | |a drnn ---uucaa | ||
| 181 | 0 | |a i | |
| 182 | 0 | |a b | |
| 200 | 1 | |a Pulsed cathodoluminescence and Raman spectra of MoS2 and WS2 nanocrystals and their combination MoS2/WS2 produced by self-propagating high-temperature synthesis |f F. E. Bozheev, D. T. Valiev, R. R. Nemkaeva | |
| 203 | |a Text |c electronic | ||
| 300 | |a Title screen | ||
| 320 | |a [References: 36 tit.] | ||
| 330 | |a Molybdenum and tungsten disulfide nanoplates were produced by self-propagating high-temperature synthesis in argon atmosphere. This method provides an easy way to produce MoS2 and WS2 from nanoplates up to single- and several layers. The Raman peak intensities corresponding to in-plane E12g and out-of-plane A1g vibration modes and their shifts strongly depend on the thicknesses of the MoS2 and WS2 platelets indicating size-dependent scaling laws and properties. An electron beam irradiation of MoS2 and WS2powders leads to an occurrence of pulsed cathodoluminescence (PCL) spectra at 575?nm (2.15?eV) and 550?nm (2.25?eV) characteristic to their intrinsic band gaps. For the combination of MoS2 and WS2nanopowders, a PCL shoulder at 430?nm (2.88?eV) was observed, which is explained by the radiative electron-hole recombination at the MoS2/WS2grain boundaries. The luminescence decay kinetics of the MoS2/WS2 nanoplates appears to be slower than for individual MoS2 and WS2 platelets due to a spatial separation of electrons and holes at MoS2/WS2 junction resulting in extension of recombination time. | ||
| 333 | |a Режим доступа: по договору с организацией-держателем ресурса | ||
| 461 | |t Applied Physics Letters |d 1962- | ||
| 463 | |t Vol. 108, iss. 9 |v [093111, 5 p.] |d 2016 | ||
| 610 | 1 | |a электронный ресурс | |
| 610 | 1 | |a труды учёных ТПУ | |
| 700 | 1 | |a Bozheev |b F. E. |c specialist in the field of Electrophysics |c engineer-researcher of Tomsk Polytechnic University |f 1987- |g Farabi Esimovich |3 (RuTPU)RU\TPU\pers\37025 |9 20040 | |
| 701 | 1 | |a Valiev |b D. T. |c specialist in the field of material science |c Associate Professor of Tomsk Polytechnic University, Candidate of Physical and Mathematical Sciences |f 1987- |g Damir Talgatovich |3 (RuTPU)RU\TPU\pers\33772 |9 17370 | |
| 701 | 1 | |a Nemkaeva |b R. R. |g Renata Ruslanovna | |
| 712 | 0 | 2 | |a Национальный исследовательский Томский политехнический университет |b Институт физики высоких технологий |b Лаборатория № 12 |3 (RuTPU)RU\TPU\col\19054 |9 27328 |
| 712 | 0 | 2 | |a Национальный исследовательский Томский политехнический университет |b Институт физики высоких технологий |b Кафедра лазерной и световой техники |3 (RuTPU)RU\TPU\col\18690 |9 27143 |
| 801 | 2 | |a RU |b 63413507 |c 20160801 |g RCR | |
| 856 | 4 | |u http://dx.doi.org/10.1063/1.4943144 | |
| 942 | |c CF | ||