On the "Area Effect" in Metal-Dielectric-Metal Cathodes
| Parent link: | Journal of Communications Technology and Electronics: Scientific Journal Vol. 42, iss. 3.— 1997.— [P. 346-347] |
|---|---|
| Main Author: | |
| Other Authors: | , |
| Summary: | Title screen A method of increasing the emissive part of the area of metal-dielectric-metal (MDM) cathodes by forming microscopic protuberances on one of the electrodes by the photolithographic technique is presented. The manufacturing technology for Al-SiO2-Al thin-film structure with microprotuberances of the size of ~1 µm is described. A mechanism for increasing the emission current is proposed. Режим доступа: по договору с организацией-держателем ресурса |
| Published: |
1997
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| Subjects: | |
| Online Access: | https://www.scopus.com/record/display.uri?eid=2-s2.0-2742594986&origin=inward&txGid=0 |
| Format: | Electronic Book Chapter |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=649261 |
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| 200 | 1 | |a On the "Area Effect" in Metal-Dielectric-Metal Cathodes |f S. A. Gyngazov, L. A. Troyan, P. Е. Troyan | |
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| 300 | |a Title screen | ||
| 320 | |a [References: 4 tit.] | ||
| 330 | |a A method of increasing the emissive part of the area of metal-dielectric-metal (MDM) cathodes by forming microscopic protuberances on one of the electrodes by the photolithographic technique is presented. The manufacturing technology for Al-SiO2-Al thin-film structure with microprotuberances of the size of ~1 µm is described. A mechanism for increasing the emission current is proposed. | ||
| 333 | |a Режим доступа: по договору с организацией-держателем ресурса | ||
| 461 | |t Journal of Communications Technology and Electronics |o Scientific Journal | ||
| 463 | |t Vol. 42, iss. 3 |v [P. 346-347] |d 1997 | ||
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