Sintering of zirconia ceramics by intense high-energy electron beam

Bibliographic Details
Parent link:Ceramics International.— , 1981-
Vol. 42, iss. 12.— 2016.— [P. 13888–13892]
Corporate Authors: Национальный исследовательский Томский политехнический университет Институт неразрушающего контроля Проблемная научно-исследовательская лаборатория электроники, диэлектриков и полупроводников, Национальный исследовательский Томский политехнический университет Институт неразрушающего контроля Кафедра физических методов и приборов контроля качества
Other Authors: Surzhikov A. P. Anatoly Petrovich, Frangulyan (Franguljyan) Т. S. Tamara Semenovna, Gyngazov (Ghyngazov) S. A. Sergey Anatolievich, Vasiljev I. P. Ivan Petrovich, Chernyavski (Chernyavskiy) A. V. Aleksandr Viktorovich
Summary:Title screen
A comparative analysis of the efficiency of zirconia ceramics sintering by thermal method and high-energy electron beam sintering was performed for compacts prepared from commercial TZ-3Y-E grade powder. The electron energy was 1.4. MeV. The samples were sintered in the temperature range of 1200-1400. °C. Sintering of zirconia ceramics by high-energy accelerated electron beam is shown to reduce the firing temperature by about 200. °C compared to that in conventional heating technique. Ceramics sintered by accelerated electron beam at 1200. °C is of high density, microhardness and smaller grain size compared to that produced by thermal firing at 1400. °C. Electron beam sintering at higher temperature causes deterioration of ceramics properties due to radiation-induced acceleration of high-temperature recrystallization at higher temperatures.
Режим доступа: по договору с организацией-держателем ресурса
Language:English
Published: 2016
Subjects:
Online Access:http://dx.doi.org/10.1016/j.ceramint.2016.05.198
Format: Electronic Book Chapter
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=649255

MARC

LEADER 00000naa0a2200000 4500
001 649255
005 20250303155420.0
035 |a (RuTPU)RU\TPU\network\14417 
035 |a RU\TPU\network\12474 
090 |a 649255 
100 |a 20160627d2016 k||y0rusy50 ba 
101 0 |a eng 
135 |a drcn ---uucaa 
181 0 |a i  
182 0 |a b 
200 1 |a Sintering of zirconia ceramics by intense high-energy electron beam  |f A. P. Surzhikov [et al.] 
203 |a Text  |c electronic 
300 |a Title screen 
320 |a [References: p. 13892 (30 tit.)] 
330 |a A comparative analysis of the efficiency of zirconia ceramics sintering by thermal method and high-energy electron beam sintering was performed for compacts prepared from commercial TZ-3Y-E grade powder. The electron energy was 1.4. MeV. The samples were sintered in the temperature range of 1200-1400. °C. Sintering of zirconia ceramics by high-energy accelerated electron beam is shown to reduce the firing temperature by about 200. °C compared to that in conventional heating technique. Ceramics sintered by accelerated electron beam at 1200. °C is of high density, microhardness and smaller grain size compared to that produced by thermal firing at 1400. °C. Electron beam sintering at higher temperature causes deterioration of ceramics properties due to radiation-induced acceleration of high-temperature recrystallization at higher temperatures. 
333 |a Режим доступа: по договору с организацией-держателем ресурса 
461 |t Ceramics International  |d 1981- 
463 |t Vol. 42, iss. 12  |v [P. 13888–13892]  |d 2016 
610 1 |a электронный ресурс 
610 1 |a труды учёных ТПУ 
610 1 |a электронные пучки 
610 1 |a спекание 
610 1 |a высокая энергия 
610 1 |a твердость 
610 1 |a керамика 
701 1 |a Surzhikov  |b A. P.  |c physicist  |c Professor of Tomsk Polytechnic University, doctor of physical and mathematical sciences (DSc)  |f 1951-  |g Anatoly Petrovich  |3 (RuTPU)RU\TPU\pers\30237  |9 14617 
701 1 |a Frangulyan (Franguljyan)  |b Т. S.  |c specialist in the field of electronics, dielectrics and semiconductors  |c leading researcher of Tomsk Polytechnic University, candidate of physical and mathematical Sciences  |f 1940-  |g Tamara Semenovna  |3 (RuTPU)RU\TPU\pers\33975  |9 17548 
701 1 |a Gyngazov (Ghyngazov)  |b S. A.  |c specialist in the field of electronics  |c Professor of Tomsk Polytechnic University, Doctor of technical sciences  |f 1958-  |g Sergey Anatolievich  |3 (RuTPU)RU\TPU\pers\33279  |9 17024 
701 1 |a Vasiljev  |b I. P.  |c a specialist in the field of electrical engineering  |c assistant researcher of Tomsk Polytechnic University  |f 1990-  |g Ivan Petrovich  |3 (RuTPU)RU\TPU\pers\33976  |9 17549 
701 1 |a Chernyavski (Chernyavskiy)  |b A. V.  |c specialist in the field of electronics  |c senior researcher of Tomsk Polytechnic University, candidate of physico-mathematical sciences  |f 1966-  |g Aleksandr Viktorovich  |3 (RuTPU)RU\TPU\pers\34159  |9 17699 
712 0 2 |a Национальный исследовательский Томский политехнический университет  |b Институт неразрушающего контроля  |b Проблемная научно-исследовательская лаборатория электроники, диэлектриков и полупроводников  |3 (RuTPU)RU\TPU\col\19033  |9 27309 
712 0 2 |a Национальный исследовательский Томский политехнический университет  |b Институт неразрушающего контроля  |b Кафедра физических методов и приборов контроля качества  |3 (RuTPU)RU\TPU\col\18709  |9 27162 
801 2 |a RU  |b 63413507  |c 20161213  |g RCR 
856 4 |u http://dx.doi.org/10.1016/j.ceramint.2016.05.198 
942 |c CF