Dependence of mobility on the electron concentration upon scattering at polar optical phonons in AIII–N nitrides

Dependence of mobility on the electron concentration upon scattering at polar optical phonons in AIII–N nitrides

Bibliographic Details
Parent link:Semiconductors: Scientific Journal
Vol. 50, iss. 4.— 2016.— [P. 433-438]
Main Author: Borisenko S. I. Sergey Ivanovich
Corporate Author: Национальный исследовательский Томский политехнический университет Физико-технический институт Кафедра экспериментальной физики
Summary:Title screen
The dependence of the effective relaxation time on the electron concentration in AIII–N nitrides in the case of electron scattering at polar longitudinal optical phonons is calculated by the marching method. The method takes into account the inelasticity of electron scattering at polar optical phonons for nitrides in the zinc-blende approximation. The calculations show a substantial increase in mobility in samples with a degenerate electron gas, if screening of the long-range potential of polar longitudinal optical phonons is taken into account.
Режим доступа: по договору с организацией-держателем ресурса
Published: 2016
Series:Electronic Properties Of Semiconductors
Subjects:
электронный ресурс
труды учёных ТПУ
Online Access:http://dx.doi.org/10.1134/S1063782616040084
Format: Electronic Book Chapter
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=649136

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