Dependence of mobility on the electron concentration upon scattering at polar optical phonons in AIII–N nitrides; Semiconductors; Vol. 50, iss. 4

Dependence of mobility on the electron concentration upon scattering at polar optical phonons in AIII–N nitrides; Semiconductors; Vol. 50, iss. 4

التفاصيل البيبلوغرافية
Parent link:	Semiconductors: Scientific Journal Vol. 50, iss. 4.— 2016.— [P. 433-438]
المؤلف الرئيسي:	Borisenko S. I. Sergey Ivanovich
مؤلف مشترك:	Национальный исследовательский Томский политехнический университет Физико-технический институт Кафедра экспериментальной физики
الملخص:	Title screen The dependence of the effective relaxation time on the electron concentration in AIII–N nitrides in the case of electron scattering at polar longitudinal optical phonons is calculated by the marching method. The method takes into account the inelasticity of electron scattering at polar optical phonons for nitrides in the zinc-blende approximation. The calculations show a substantial increase in mobility in samples with a degenerate electron gas, if screening of the long-range potential of polar longitudinal optical phonons is taken into account. Режим доступа: по договору с организацией-держателем ресурса
اللغة:	الإنجليزية
منشور في:	2016
سلاسل:	Electronic Properties Of Semiconductors
الموضوعات:	электронный ресурс труды учёных ТПУ
الوصول للمادة أونلاين:	http://dx.doi.org/10.1134/S1063782616040084
التنسيق:	الكتروني فصل الكتاب
KOHA link:	https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=649136

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