Dependence of mobility on the electron concentration upon scattering at polar optical phonons in AIII–N nitrides; Semiconductors; Vol. 50, iss. 4
| Parent link: | Semiconductors: Scientific Journal Vol. 50, iss. 4.— 2016.— [P. 433-438] |
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| Résumé: | Title screen The dependence of the effective relaxation time on the electron concentration in AIII–N nitrides in the case of electron scattering at polar longitudinal optical phonons is calculated by the marching method. The method takes into account the inelasticity of electron scattering at polar optical phonons for nitrides in the zinc-blende approximation. The calculations show a substantial increase in mobility in samples with a degenerate electron gas, if screening of the long-range potential of polar longitudinal optical phonons is taken into account. Режим доступа: по договору с организацией-держателем ресурса |
| Langue: | anglais |
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2016
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| Collection: | Electronic Properties Of Semiconductors |
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| Accès en ligne: | http://dx.doi.org/10.1134/S1063782616040084 |
| Format: | Électronique Chapitre de livre |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=649136 |