Synthesis of multilayer polycrystalline diamond films using bias-induced secondary nucleation

Podrobná bibliografie
Parent link:Materials Letters
Vol. 139.— 2015.— [P. 389-392]
Hlavní autor: Linnik S. A. Stepan Andreevich
Korporativní autor: Национальный исследовательский Томский политехнический университет Институт физики высоких технологий Лаборатория № 1
Další autoři: Gaydaychuk A. V. Alexander Valerievich
Shrnutí:Title screen
We developed a new method for the synthesis of multilayer polycrystalline diamond films based on negative bias-induced secondary nucleation on a diamond surface induced by intense ion bombardment during CVD. The periodic formation of new nucleation centers and subsequent deposition allow us to synthesize films of up to 20 layers with a thickness up to 50 ?m. The multilayer diamond films were characterized by SEM and XRD. Dependence of the nucleation density on the methane concentration and current density was investigated. This technique provides multilayer diamond films for a wide range of applications.
Режим доступа: по договору с организацией-держателем ресурса
Jazyk:angličtina
Vydáno: 2015
Témata:
On-line přístup:http://dx.doi.org/10.1016/j.matlet.2014.10.142
Médium: Elektronický zdroj Kapitola
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=649017

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330 |a We developed a new method for the synthesis of multilayer polycrystalline diamond films based on negative bias-induced secondary nucleation on a diamond surface induced by intense ion bombardment during CVD. The periodic formation of new nucleation centers and subsequent deposition allow us to synthesize films of up to 20 layers with a thickness up to 50 ?m. The multilayer diamond films were characterized by SEM and XRD. Dependence of the nucleation density on the methane concentration and current density was investigated. This technique provides multilayer diamond films for a wide range of applications. 
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