Synthesis of multilayer polycrystalline diamond films using bias-induced secondary nucleation

Bibliographic Details
Parent link:Materials Letters
Vol. 139.— 2015.— [P. 389-392]
Main Author: Linnik S. A. Stepan Andreevich
Corporate Author: Национальный исследовательский Томский политехнический университет Институт физики высоких технологий Лаборатория № 1
Other Authors: Gaydaychuk A. V. Alexander Valerievich
Summary:Title screen
We developed a new method for the synthesis of multilayer polycrystalline diamond films based on negative bias-induced secondary nucleation on a diamond surface induced by intense ion bombardment during CVD. The periodic formation of new nucleation centers and subsequent deposition allow us to synthesize films of up to 20 layers with a thickness up to 50 ?m. The multilayer diamond films were characterized by SEM and XRD. Dependence of the nucleation density on the methane concentration and current density was investigated. This technique provides multilayer diamond films for a wide range of applications.
Режим доступа: по договору с организацией-держателем ресурса
Language:English
Published: 2015
Subjects:
Online Access:http://dx.doi.org/10.1016/j.matlet.2014.10.142
Format: Electronic Book Chapter
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=649017
Description
Summary:Title screen
We developed a new method for the synthesis of multilayer polycrystalline diamond films based on negative bias-induced secondary nucleation on a diamond surface induced by intense ion bombardment during CVD. The periodic formation of new nucleation centers and subsequent deposition allow us to synthesize films of up to 20 layers with a thickness up to 50 ?m. The multilayer diamond films were characterized by SEM and XRD. Dependence of the nucleation density on the methane concentration and current density was investigated. This technique provides multilayer diamond films for a wide range of applications.
Режим доступа: по договору с организацией-держателем ресурса
DOI:10.1016/j.matlet.2014.10.142