Synthesis of multilayer polycrystalline diamond films using bias-induced secondary nucleation; Materials Letters; Vol. 139
| Parent link: | Materials Letters Vol. 139.— 2015.— [P. 389-392] |
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| Shrnutí: | Title screen We developed a new method for the synthesis of multilayer polycrystalline diamond films based on negative bias-induced secondary nucleation on a diamond surface induced by intense ion bombardment during CVD. The periodic formation of new nucleation centers and subsequent deposition allow us to synthesize films of up to 20 layers with a thickness up to 50 ?m. The multilayer diamond films were characterized by SEM and XRD. Dependence of the nucleation density on the methane concentration and current density was investigated. This technique provides multilayer diamond films for a wide range of applications. Режим доступа: по договору с организацией-держателем ресурса |
| Jazyk: | angličtina |
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2015
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| On-line přístup: | http://dx.doi.org/10.1016/j.matlet.2014.10.142 |
| Médium: | Elektronický zdroj Kapitola |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=649017 |
| Shrnutí: | Title screen We developed a new method for the synthesis of multilayer polycrystalline diamond films based on negative bias-induced secondary nucleation on a diamond surface induced by intense ion bombardment during CVD. The periodic formation of new nucleation centers and subsequent deposition allow us to synthesize films of up to 20 layers with a thickness up to 50 ?m. The multilayer diamond films were characterized by SEM and XRD. Dependence of the nucleation density on the methane concentration and current density was investigated. This technique provides multilayer diamond films for a wide range of applications. Режим доступа: по договору с организацией-держателем ресурса |
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| DOI: | 10.1016/j.matlet.2014.10.142 |