Modeling of dynamics of big size ZnGeP2 crystal growthby vertical Bridgman technique; Bulletin of the Polish Academy of sciences: Technical sciences; Vol. 66, No. 3

Bibliografiset tiedot
Parent link:Bulletin of the Polish Academy of sciences: Technical sciences
Vol. 66, No. 3.— 2018.— [P. 283-290]
Yhteisötekijä: Национальный исследовательский Томский политехнический университет Инженерная школа информационных технологий и робототехники Отделение автоматизации и робототехники
Muut tekijät: Filippov (Philipov) M. M. Maksim Mikhailovich, Babushkin Yu. V. Yury Vladimirovich, Efimov S. V. Semyon Viktorovich, Zamyatin S. V. Sergey Vladimirovich, Rudnitsky V. A. Vladislav Aleksandrovich, Trofimov A. Yu. Andrey Yurjevich, Gribenyukov A. I. Aleksandr Ivanovich
Yhteenveto:Title screen
The results of a modelling of big size single crystal ZnGeP2 growth dynamics in the multi-zone thermal installation based on the vertical variant of the Bridgman technique are given. Trustworthiness of the results modeling is achieved by means of creation of the mathematical model taking into account the particularities of the installation as well as the changes in installation work volume during crystallization. Temperature field changes during crystal growth by numerical technique were examined. It is demonstrated that growth container moving has a significant impact on temperature field in work volume and crystallization isotherm local position. Thus, the actual crystal growth rate differs from the nominal velocity of growth container moving. The data received as a result of modelling should be taken into account in new equipment designing, crystallization process control system development and crystal growth experiments planning.
Kieli:englanti
Julkaistu: 2018
Aiheet:
Linkit:https://doi.org/10.24425/123434
Aineistotyyppi: Elektroninen Kirjan osa
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=648768

MARC

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200 1 |a Modeling of dynamics of big size ZnGeP2 crystal growthby vertical Bridgman technique  |f M. M. Filippov, Yu. V. Babushkin, S. V. Efimov [et al.] 
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330 |a The results of a modelling of big size single crystal ZnGeP2 growth dynamics in the multi-zone thermal installation based on the vertical variant of the Bridgman technique are given. Trustworthiness of the results modeling is achieved by means of creation of the mathematical model taking into account the particularities of the installation as well as the changes in installation work volume during crystallization. Temperature field changes during crystal growth by numerical technique were examined. It is demonstrated that growth container moving has a significant impact on temperature field in work volume and crystallization isotherm local position. Thus, the actual crystal growth rate differs from the nominal velocity of growth container moving. The data received as a result of modelling should be taken into account in new equipment designing, crystallization process control system development and crystal growth experiments planning. 
461 |t Bulletin of the Polish Academy of sciences: Technical sciences 
463 |t Vol. 66, No. 3  |v [P. 283-290]  |d 2018 
610 1 |a электронный ресурс 
610 1 |a труды учёных ТПУ 
610 1 |a crystal growth 
610 1 |a temperature field 
610 1 |a finite elements method 
610 1 |a Bridgman technique 
610 1 |a рост 
610 1 |a температурные поля 
610 1 |a кристаллы 
610 1 |a метод конечных элементов 
610 1 |a метод Бриджмена 
701 1 |a Filippov (Philipov)  |b M. M.  |c specialist in the field of organization of higher professional education  |c Leading expert of Tomsk Polytechnic University, Candidate of technical sciences  |f 1982-  |g Maksim Mikhailovich  |3 (RuTPU)RU\TPU\pers\33699  |9 17330 
701 1 |a Babushkin  |b Yu. V.  |g Yury Vladimirovich 
701 1 |a Efimov  |b S. V.  |c specialist in the field of automatic control systems  |c associate Professor of Tomsk Polytechnic University, candidate of technical Sciences  |f 1985-  |g Semyon Viktorovich  |3 (RuTPU)RU\TPU\pers\33837  |9 17426 
701 1 |a Zamyatin  |b S. V.  |c specialist in the field of automatic control  |c associate Professor, Tomsk Polytechnic University, candidate of technical sciences  |f 1982-  |g Sergey Vladimirovich  |3 (RuTPU)RU\TPU\pers\30701  |9 14981 
701 1 |a Rudnitsky  |b V. A.  |g Vladislav Aleksandrovich 
701 1 |a Trofimov  |b A. Yu.  |g Andrey Yurjevich 
701 1 |a Gribenyukov  |b A. I.  |g Aleksandr Ivanovich 
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