Radiation-induced deposition of transparent conductive tin oxide coatings
| Parent link: | IOP Conference Series: Materials Science and Engineering Vol. 124 : Mechanical Engineering, Automation and Control Systems (MEACS2015).— 2016.— [012148, 5 p.] |
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| Corporate Author: | |
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| Summary: | Title screen The study of tin oxide films is stimulated by the search for an alternative replacement of indium-tin oxide (ITO) films used as transparent conductors, oxidation catalysts, material gas sensors, etc. This work was aimed at studying the influence of argon ions irradiation on optical and electrical characteristics of tin oxide films. Thin films of tin oxide (without dopants) were deposited on glass substrates at room temperature using reactive magnetron sputtering. After deposition, the films were irradiated with an argon ion beam. The current density of the beam was (were) 2.5 mA/cm{2}, and the particles energy was 300-400 eV. The change of the optical and electrical properties of the films depending on the irradiation time was studied. Films optical properties were investigated by photometry in the range of 300-1100 nm. Films structural properties were studied using X-ray diffraction. The diffractometric research showed that the films, deposited on a substrate, had a crystal structure, and after argon ions irradiation they became quasi-crystalline (amorphous). It has been found that the transmission increases proportionally with the irradiation time, however the sheet resistance increases disproportionally. Tin oxide films (thickness ~30 nm) with ~100% transmittance and sheet resistance of ~100 kOhm/sq. were obtained. The study has proved to be prospective in the use of ion beams to improve the properties of transparent conducting oxides. |
| Language: | English |
| Published: |
2016
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| Series: | Materials Science in Mechanical Engineering |
| Subjects: | |
| Online Access: | http://dx.doi.org/10.1088/1757-899X/124/1/012148 http://earchive.tpu.ru/handle/11683/33894 |
| Format: | Electronic Book Chapter |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=648620 |
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| 200 | 1 | |a Radiation-induced deposition of transparent conductive tin oxide coatings |f S. P. Umnov, O. Kh. Asainov, V. Temenkov | |
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| 225 | 1 | |a Materials Science in Mechanical Engineering | |
| 300 | |a Title screen | ||
| 320 | |a [References: 12 tit.] | ||
| 330 | |a The study of tin oxide films is stimulated by the search for an alternative replacement of indium-tin oxide (ITO) films used as transparent conductors, oxidation catalysts, material gas sensors, etc. This work was aimed at studying the influence of argon ions irradiation on optical and electrical characteristics of tin oxide films. Thin films of tin oxide (without dopants) were deposited on glass substrates at room temperature using reactive magnetron sputtering. After deposition, the films were irradiated with an argon ion beam. The current density of the beam was (were) 2.5 mA/cm{2}, and the particles energy was 300-400 eV. The change of the optical and electrical properties of the films depending on the irradiation time was studied. Films optical properties were investigated by photometry in the range of 300-1100 nm. Films structural properties were studied using X-ray diffraction. The diffractometric research showed that the films, deposited on a substrate, had a crystal structure, and after argon ions irradiation they became quasi-crystalline (amorphous). It has been found that the transmission increases proportionally with the irradiation time, however the sheet resistance increases disproportionally. Tin oxide films (thickness ~30 nm) with ~100% transmittance and sheet resistance of ~100 kOhm/sq. were obtained. The study has proved to be prospective in the use of ion beams to improve the properties of transparent conducting oxides. | ||
| 461 | 0 | |0 (RuTPU)RU\TPU\network\2008 |t IOP Conference Series: Materials Science and Engineering | |
| 463 | 0 | |0 (RuTPU)RU\TPU\network\13617 |t Vol. 124 : Mechanical Engineering, Automation and Control Systems (MEACS2015) |o International Conference, 1–4 December 2015, Tomsk, Russia |o [proceedings] |v [012148, 5 p.] |d 2016 | |
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| 610 | 1 | |a ионы аргона | |
| 700 | 1 | |a Umnov |b S. P. |c physicist |c Senior researcher of Tomsk Polytechnic University, Candidate of physical and mathematical sciences |f 1957- |g Sergey Pavlovich |3 (RuTPU)RU\TPU\pers\34215 | |
| 701 | 1 | |a Asainov |b O. Kh. |c physicist |c Head of the laboratory of Tomsk Polytechnic University, Candidate of physical and mathematical sciences |f 1957- |g Oleg Khaydarovich |3 (RuTPU)RU\TPU\pers\34632 | |
| 701 | 1 | |a Temenkov |b V. | |
| 712 | 0 | 2 | |a Национальный исследовательский Томский политехнический университет |c (2009- ) |9 26305 |
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