Deposition of Polycrystalline Diamond Films with a Controlled Grain Size by Periodic Secondary Nucleation
| Parent link: | Materials Today: Proceedings: Scientific Journal Vol. 3, supl. 2 : Diamond and Carbon Materials - DCM 2014.— 2016.— [P. 138–144] |
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| Zusammenfassung: | Title screen This paper presents a new method for the synthesis of polycrystalline diamond films with a controlled grain size, based on theprinciple of creating a multilayer coating structure by periodic bias-induced secondary nucleation. By this technique, wesynthesized diamond films with a thickness of up to 120 µm and a grain size of up to 1 µm. The diamond multilayer filmsobtained were characterized by scanning electron microscopy (SEM), Raman spectroscopy, and X-ray diffraction (XRD). Theeffect of different deposition parameters on nucleation density was also discussed. This method shows considerable promise forthe synthesis of thick diamond coatings with low roughness and internal stress. Режим доступа: по договору с организацией-держателем ресурса |
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2016
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| Online-Zugang: | http://dx.doi.org/10.1016/j.matpr.2016.02.024 |
| Format: | Elektronisch Buchkapitel |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=648523 |
| Zusammenfassung: | Title screen This paper presents a new method for the synthesis of polycrystalline diamond films with a controlled grain size, based on theprinciple of creating a multilayer coating structure by periodic bias-induced secondary nucleation. By this technique, wesynthesized diamond films with a thickness of up to 120 µm and a grain size of up to 1 µm. The diamond multilayer filmsobtained were characterized by scanning electron microscopy (SEM), Raman spectroscopy, and X-ray diffraction (XRD). Theeffect of different deposition parameters on nucleation density was also discussed. This method shows considerable promise forthe synthesis of thick diamond coatings with low roughness and internal stress. Режим доступа: по договору с организацией-держателем ресурса |
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| DOI: | 10.1016/j.matpr.2016.02.024 |