On the physical nature of the threshold displacement energy in radiation physics
| Parent link: | Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques: Scientific Journal Vol. 9, iss. 6.— 2015.— [P. 1206-1212] |
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| Coauteur: | |
| Andere auteurs: | , , , |
| Samenvatting: | Title screen A formula for numerical estimation of the threshold energy E d of atomic displacement from lattice sites upon the irradiation of solids is proposed for the first time. The E d structure is determined by analyzing processes accompanying the subthreshold motion of a lattice atom ejected from a site (when the energy W acquired by the atom does not exceed E d). The relation between E d and the physical properties of solids and the parameters of their crystal lattice is shown. It is established that the partial contribution of the binding energy to E d does not exceed 30%, and the dissipative energy losses (intracrystalline friction) during such atomic motion is about 10%. The main part of E d is determined by the work of the forces of electrostatic (in the case of semiconductors and insulators) and elastic (for metals) interaction between vacancies and interstitial atoms. Режим доступа: по договору с организацией-держателем ресурса |
| Taal: | Engels |
| Gepubliceerd in: |
2015
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| Onderwerpen: | |
| Online toegang: | http://dx.doi.org/10.1134/S102745101506021X |
| Formaat: | Elektronisch Hoofdstuk |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=648456 |
| Samenvatting: | Title screen A formula for numerical estimation of the threshold energy E d of atomic displacement from lattice sites upon the irradiation of solids is proposed for the first time. The E d structure is determined by analyzing processes accompanying the subthreshold motion of a lattice atom ejected from a site (when the energy W acquired by the atom does not exceed E d). The relation between E d and the physical properties of solids and the parameters of their crystal lattice is shown. It is established that the partial contribution of the binding energy to E d does not exceed 30%, and the dissipative energy losses (intracrystalline friction) during such atomic motion is about 10%. The main part of E d is determined by the work of the forces of electrostatic (in the case of semiconductors and insulators) and elastic (for metals) interaction between vacancies and interstitial atoms. Режим доступа: по договору с организацией-держателем ресурса |
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| DOI: | 10.1134/S102745101506021X |