APA (7th ed.) Citation

Grinyaev S. N. Sergey Nikolaevich & Razzhuvalov A. N. Alexander Nikolaevich. (2003). The effect of internal fields on tunneling current in strained GaN/AlxGa1-x N(0001) structures; Semiconductors; Vol. 37, iss. 4. 2003. https://doi.org/10.1134/1.1568463

Chicago Style (17th ed.) Citation

Grinyaev S. N. Sergey Nikolaevich and Razzhuvalov A. N. Alexander Nikolaevich. The Effect of Internal Fields on Tunneling Current in Strained GaN/AlxGa1-x N(0001) Structures; Semiconductors; Vol. 37, Iss. 4. 2003, 2003. https://doi.org/10.1134/1.1568463.

MLA (9th ed.) Citation

Grinyaev S. N. Sergey Nikolaevich and Razzhuvalov A. N. Alexander Nikolaevich. The Effect of Internal Fields on Tunneling Current in Strained GaN/AlxGa1-x N(0001) Structures; Semiconductors; Vol. 37, Iss. 4. 2003, 2003. https://doi.org/10.1134/1.1568463.