Self-consistent calculation of tunneling current in w-GaN/AlGaN(0001) two-barrier heterostructures; Semiconductors; Vol. 40, iss. 6

Self-consistent calculation of tunneling current in w-GaN/AlGaN(0001) two-barrier heterostructures; Semiconductors; Vol. 40, iss. 6

Podrobná bibliografie
Parent link:Semiconductors: Scientific Journal
Vol. 40, iss. 6.— 2006.— [P. 675-680]
Hlavní autor: Grinyaev S. N. Sergey Nikolaevich
Další autoři: Razzhuvalov A. N. Alexander Nikolaevich
Shrnutí:Title screen
The specific features of the tunneling current in wurtzite GaN/AlGaN(0001) two-barrier structures are studied by solving the Schrodinger equation and the Poisson equation simultaneously, with regard to spontaneous and piezoelectric polarizations. It is shown that the internal fields manifest themselves in the asymmetry of the tunneling current via the value of the electronic charge in the quantum well. This charge is larger when the internal and external fields in the well compensate each other, resulting in smaller shifts of potential and resonance levels in the active region with voltage, in the higher resistance of the structure, and in the linear current-voltage dependence within a wide range of voltages. When the internal and external fields are the same, the current exhibits a sharp negative-differential-conductivity structure, with the peak-to-valley ratio equal to about four. The structure is similar to one of the branches of the current-voltage characteristic of the GaAs/AlGaAs(001) two-barrier structure, suggesting that nitrides are promising materials for resonance-tunneling devices.
Режим доступа: по договору с организацией-держателем ресурса
Jazyk:angličtina
Vydáno: 2006
Edice:Low-Dimensional Systems
Témata:
электронный ресурс
труды учёных ТПУ
On-line přístup:http://dx.doi.org/10.1134/S1063782606060121
Médium: Elektronický zdroj Kapitola
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=648238

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