Hysteresis of tunnel current in w-GaN/AlGaN(0001) double-barrier structures

Hysteresis of tunnel current in w-GaN/AlGaN(0001) double-barrier structures

Bibliographic Details
Parent link:Semiconductors: Scientific Journal
Vol. 42, iss. 5.— 2008.— [P. 580-588]
Main Author: Razzhuvalov A. N. Alexander Nikolaevich
Other Authors: Grinyaev S. N. Sergey Nikolaevich
Summary:Title screen
On the basis of a self-consistent solution of the Schrodinger and Poisson equations, the features of the tunnel-current hysteresis in w-GaN/AlGaN(0001) double-barrier structures are investigated. It is shown that the hysteresis loop depends on the mutual orientation of external and internal fields in the well and is wider at the voltage polarity when these fields compensate each other. Within the framework of the single-resonance approximation, a tunnel-current model in the double-barrier structure is developed, and the relation between the hysteresis-loop parameters and resonant states is found. It is established that the hysteresis loop can be relatively wide (?4 V) even in geometrically symmetric structures with the participation of two resonances. In asymmetrical structures, the change in the growth-surface type results in enhancement or suppression of the hysteresis loop depending on the alternation of nonequivalent barriers.
Режим доступа: по договору с организацией-держателем ресурса
Language:English
Published: 2008
Series:Low-Dimensional Systems
Subjects:
электронный ресурс
труды учёных ТПУ
Online Access:http://dx.doi.org/10.1134/S1063782608050163
Format: Electronic Book Chapter
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=648236

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