Hysteresis of tunnel current in w-GaN/AlGaN(0001) double-barrier structures; Semiconductors; Vol. 42, iss. 5
| Parent link: | Semiconductors: Scientific Journal Vol. 42, iss. 5.— 2008.— [P. 580-588] |
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| Autor principal: | |
| Outros Autores: | |
| Resumo: | Title screen On the basis of a self-consistent solution of the Schrodinger and Poisson equations, the features of the tunnel-current hysteresis in w-GaN/AlGaN(0001) double-barrier structures are investigated. It is shown that the hysteresis loop depends on the mutual orientation of external and internal fields in the well and is wider at the voltage polarity when these fields compensate each other. Within the framework of the single-resonance approximation, a tunnel-current model in the double-barrier structure is developed, and the relation between the hysteresis-loop parameters and resonant states is found. It is established that the hysteresis loop can be relatively wide (?4 V) even in geometrically symmetric structures with the participation of two resonances. In asymmetrical structures, the change in the growth-surface type results in enhancement or suppression of the hysteresis loop depending on the alternation of nonequivalent barriers. Режим доступа: по договору с организацией-держателем ресурса |
| Idioma: | inglês |
| Publicado em: |
2008
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| coleção: | Low-Dimensional Systems |
| Assuntos: | |
| Acesso em linha: | http://dx.doi.org/10.1134/S1063782608050163 |
| Formato: | Recurso Eletrônico Capítulo de Livro |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=648236 |
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| 200 | 1 | |a Hysteresis of tunnel current in w-GaN/AlGaN(0001) double-barrier structures |d Гистерезис туннельного тока в двухбарьерный структурах W-GaN/AlGaN(0001) |f A. N. Razzhuvalov, S. N. Grinyaev | |
| 203 | |a Text |c electronic | ||
| 225 | 1 | |a Low-Dimensional Systems | |
| 300 | |a Title screen | ||
| 320 | |a [References: 21 tit.] | ||
| 330 | |a On the basis of a self-consistent solution of the Schrodinger and Poisson equations, the features of the tunnel-current hysteresis in w-GaN/AlGaN(0001) double-barrier structures are investigated. It is shown that the hysteresis loop depends on the mutual orientation of external and internal fields in the well and is wider at the voltage polarity when these fields compensate each other. Within the framework of the single-resonance approximation, a tunnel-current model in the double-barrier structure is developed, and the relation between the hysteresis-loop parameters and resonant states is found. It is established that the hysteresis loop can be relatively wide (?4 V) even in geometrically symmetric structures with the participation of two resonances. In asymmetrical structures, the change in the growth-surface type results in enhancement or suppression of the hysteresis loop depending on the alternation of nonequivalent barriers. | ||
| 333 | |a Режим доступа: по договору с организацией-держателем ресурса | ||
| 461 | |t Semiconductors |o Scientific Journal | ||
| 463 | |t Vol. 42, iss. 5 |v [P. 580-588] |d 2008 | ||
| 510 | 1 | |a Гистерезис туннельного тока в двухбарьерный структурах W-GaN/AlGaN(0001) |z rus | |
| 610 | 1 | |a электронный ресурс | |
| 610 | 1 | |a труды учёных ТПУ | |
| 700 | 1 | |a Razzhuvalov |b A. N. |c physicist |c associate Professor of Tomsk Polytechnic University, candidate of physico-mathematical Sciences |f 1976- |g Alexander Nikolaevich |3 (RuTPU)RU\TPU\pers\36680 |9 19719 | |
| 701 | 1 | |a Grinyaev |b S. N. |c physicist |c Associate Professor of Tomsk Polytechnic University, Candidate of physical and mathematical science |f 1951- |g Sergey Nikolaevich |3 (RuTPU)RU\TPU\pers\32574 |9 16495 | |
| 801 | 2 | |a RU |b 63413507 |c 20160513 |g RCR | |
| 856 | 4 | |u http://dx.doi.org/10.1134/S1063782608050163 | |
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