Resonant electron tunneling in GaN/Ga1-x AlxN(0001) strained structures with spontaneous polarization and piezoeffec

Resonant electron tunneling in GaN/Ga1-x AlxN(0001) strained structures with spontaneous polarization and piezoeffec

Opis bibliograficzny
Parent link:Physics of the Solid State: Scientific Journal
Vol. 43, iss. 3.— 2001.— [P. 549-555]
1. autor: Grinyaev S. N. Sergey Nikolaevich
Kolejni autorzy: Razzhuvalov A. N. Alexander Nikolaevich
Streszczenie:Title screen
Electron tunneling through the GaN/Ga1?x AlxN(0001) wurtzite strained structures is investigated by the pseudopotential and scattering matrix methods. It is shown that the results of multiband calculations at low aluminum concentrations (x<0.3) are adequately described within the single-valley model in the envelope wave function method accounting for the dependences of the effective mass on the energy and strain. Upon electron tunneling through two-barrier structures, sharp resonance peaks are observed at a barrier thickness of several monolayers and the characteristic collision time in the resonance region is equal to ?1 ps. The internal electric fields associated with spontaneous and piezoelectric polarizations lead to a “red” or “blue” shift in the resonance energy according to the thickness and location of barriers with respect to the polar axis. In the (GaN)n(Ga1?x AlxN)m superlattices, the internal fields can form the Stark ladder of electronic states at a small number of ultrathin layers even in the absence of external fields.
Режим доступа: по договору с организацией-держателем ресурса
Wydane: 2001
Seria:Low-Dimensional Systems And Surface Physics
Hasła przedmiotowe:
электронный ресурс
труды учёных ТПУ
Dostęp online:http://dx.doi.org/10.1134/1.1356136
Format: Elektroniczne Rozdział
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=648228

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