Resonant electron tunneling in GaN/Ga1-x AlxN(0001) strained structures with spontaneous polarization and piezoeffec; Physics of the Solid State; Vol. 43, iss. 3
| Parent link: | Physics of the Solid State: Scientific Journal Vol. 43, iss. 3.— 2001.— [P. 549-555] |
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| Huvudupphovsman: | |
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| Sammanfattning: | Title screen Electron tunneling through the GaN/Ga1?x AlxN(0001) wurtzite strained structures is investigated by the pseudopotential and scattering matrix methods. It is shown that the results of multiband calculations at low aluminum concentrations (x<0.3) are adequately described within the single-valley model in the envelope wave function method accounting for the dependences of the effective mass on the energy and strain. Upon electron tunneling through two-barrier structures, sharp resonance peaks are observed at a barrier thickness of several monolayers and the characteristic collision time in the resonance region is equal to ?1 ps. The internal electric fields associated with spontaneous and piezoelectric polarizations lead to a “red” or “blue” shift in the resonance energy according to the thickness and location of barriers with respect to the polar axis. In the (GaN)n(Ga1?x AlxN)m superlattices, the internal fields can form the Stark ladder of electronic states at a small number of ultrathin layers even in the absence of external fields. Режим доступа: по договору с организацией-держателем ресурса |
| Språk: | engelska |
| Publicerad: |
2001
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| Serie: | Low-Dimensional Systems And Surface Physics |
| Ämnen: | |
| Länkar: | http://dx.doi.org/10.1134/1.1356136 |
| Materialtyp: | Elektronisk Bokavsnitt |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=648228 |
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| 200 | 1 | |a Resonant electron tunneling in GaN/Ga1-x AlxN(0001) strained structures with spontaneous polarization and piezoeffec |d Резонансное туннелирование электронов в напряженных структурах GaN/Ga1-xAlxN(0001) с учетом спонтанной поляризации и пьезоэффекта |f S. N. Grinyaev, A. N. Razzhuvalov | |
| 203 | |a Text |c electronic | ||
| 225 | 1 | |a Low-Dimensional Systems And Surface Physics | |
| 300 | |a Title screen | ||
| 320 | |a [References: 36 tit.] | ||
| 330 | |a Electron tunneling through the GaN/Ga1?x AlxN(0001) wurtzite strained structures is investigated by the pseudopotential and scattering matrix methods. It is shown that the results of multiband calculations at low aluminum concentrations (x<0.3) are adequately described within the single-valley model in the envelope wave function method accounting for the dependences of the effective mass on the energy and strain. Upon electron tunneling through two-barrier structures, sharp resonance peaks are observed at a barrier thickness of several monolayers and the characteristic collision time in the resonance region is equal to ?1 ps. The internal electric fields associated with spontaneous and piezoelectric polarizations lead to a “red” or “blue” shift in the resonance energy according to the thickness and location of barriers with respect to the polar axis. In the (GaN)n(Ga1?x AlxN)m superlattices, the internal fields can form the Stark ladder of electronic states at a small number of ultrathin layers even in the absence of external fields. | ||
| 333 | |a Режим доступа: по договору с организацией-держателем ресурса | ||
| 461 | |t Physics of the Solid State |o Scientific Journal | ||
| 463 | |t Vol. 43, iss. 3 |v [P. 549-555] |d 2001 | ||
| 510 | 1 | |a Резонансное туннелирование электронов в напряженных структурах GaN/Ga1-xAlxN(0001) с учетом спонтанной поляризации и пьезоэффекта |z rus | |
| 610 | 1 | |a электронный ресурс | |
| 610 | 1 | |a труды учёных ТПУ | |
| 700 | 1 | |a Grinyaev |b S. N. |c physicist |c Associate Professor of Tomsk Polytechnic University, Candidate of physical and mathematical science |f 1951- |g Sergey Nikolaevich |3 (RuTPU)RU\TPU\pers\32574 |9 16495 | |
| 701 | 1 | |a Razzhuvalov |b A. N. |c physicist |c associate Professor of Tomsk Polytechnic University, candidate of physico-mathematical Sciences |f 1976- |g Alexander Nikolaevich |3 (RuTPU)RU\TPU\pers\36680 |9 19719 | |
| 801 | 2 | |a RU |b 63413507 |c 20160513 |g RCR | |
| 856 | 4 | |u http://dx.doi.org/10.1134/1.1356136 | |
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