Analysis of boundary conditions for the envelope functions of GaN/InGaN(0001) heterostructures; Russian Physics Journal; Vol. 55, iss. 7
| Parent link: | Russian Physics Journal: Scientific Journal Vol. 55, iss. 7.— 2012.— [P. 764-771] |
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| Tác giả chính: | |
| Tác giả của công ty: | |
| Tác giả khác: | , |
| Tóm tắt: | Title screen Within the framework of the method of envelope functions, various matching conditions on the GaN/InGaN(0001) heteroboundaries are considered. The conditions of matching the envelope functions at which functions are joined with functions and derivatives are joined with derivatives for states in the center of the flat Brillouin zone are conventionally used. In this case, the envelope functions are symmetric (antisymmetric) about the quantum well center. This should not be the case for the anisotropic nitride heterostructures. The matching conditions based on pseudopotential calculations are suggested. These conditions qualitatively differ from those used conventionally and lead to discontinuities of the envelope functions on the heteroboundaries and removal of the above-mentioned symmetry even disregarding embedded spontaneous and piezoelectric polarization fields. The electron envelope functions appear shifted from the quantum well center in the direction of the [0001] hexagonal axis, and the holes envelope functions are shifted in the opposite direction. Different matching conditions considered in the present work lead to the energy levels in the well that differ from each other by several millielectronvolts. The electron and hole envelope functions important for the optical characteristics differ insignificantly when different matching conditions are employed; however, some of them become nonzero due to removal of the artificial symmetry. Режим доступа: по договору с организацией-держателем ресурса |
| Ngôn ngữ: | Tiếng Anh |
| Được phát hành: |
2012
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| Những chủ đề: | |
| Truy cập trực tuyến: | http://dx.doi.org/10.1007/s11182-012-9879-1 |
| Định dạng: | Điện tử Chương của sách |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=648196 |
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| 200 | 1 | |a Analysis of boundary conditions for the envelope functions of GaN/InGaN(0001) heterostructures |d Анализ граничных условий для огибающих функций в гетероструктурах GaN/InGaN(0001) |f G. F. Karavaev, V. N. Chernyshov, A. N. Razzhuvalov | |
| 203 | |a Text |c electronic | ||
| 300 | |a Title screen | ||
| 320 | |a [References: p. 771 (15 tit.)] | ||
| 330 | |a Within the framework of the method of envelope functions, various matching conditions on the GaN/InGaN(0001) heteroboundaries are considered. The conditions of matching the envelope functions at which functions are joined with functions and derivatives are joined with derivatives for states in the center of the flat Brillouin zone are conventionally used. In this case, the envelope functions are symmetric (antisymmetric) about the quantum well center. This should not be the case for the anisotropic nitride heterostructures. The matching conditions based on pseudopotential calculations are suggested. These conditions qualitatively differ from those used conventionally and lead to discontinuities of the envelope functions on the heteroboundaries and removal of the above-mentioned symmetry even disregarding embedded spontaneous and piezoelectric polarization fields. The electron envelope functions appear shifted from the quantum well center in the direction of the [0001] hexagonal axis, and the holes envelope functions are shifted in the opposite direction. Different matching conditions considered in the present work lead to the energy levels in the well that differ from each other by several millielectronvolts. The electron and hole envelope functions important for the optical characteristics differ insignificantly when different matching conditions are employed; however, some of them become nonzero due to removal of the artificial symmetry. | ||
| 333 | |a Режим доступа: по договору с организацией-держателем ресурса | ||
| 461 | |t Russian Physics Journal |o Scientific Journal | ||
| 463 | |t Vol. 55, iss. 7 |v [P. 764-771] |d 2012 | ||
| 510 | 1 | |a Анализ граничных условий для огибающих функций в гетероструктурах GaN/InGaN(0001) |z eng | |
| 610 | 1 | |a электронный ресурс | |
| 610 | 1 | |a труды учёных ТПУ | |
| 700 | 1 | |a Karavaev |b G. F. |g Gennady Fedorovich | |
| 701 | 1 | |a Chernyshov |b V. N. |c physicist |c Associate Professor of Tomsk Polytechnic University, candidate of physico-mathematical Sciences |f 1947- |g Viktor Nikolaevich |3 (RuTPU)RU\TPU\pers\36553 |9 19601 | |
| 701 | 1 | |a Razzhuvalov |b A. N. |c physicist |c associate Professor of Tomsk Polytechnic University, candidate of physico-mathematical Sciences |f 1976- |g Alexander Nikolaevich |3 (RuTPU)RU\TPU\pers\36680 |9 19719 | |
| 712 | 0 | 2 | |a Национальный исследовательский Томский политехнический университет |b Физико-технический институт |b Кафедра экспериментальной физики |3 (RuTPU)RU\TPU\col\21255 |9 27946 |
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| 856 | 4 | |u http://dx.doi.org/10.1007/s11182-012-9879-1 | |
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