Optical and electrical properties of ZnSe films grown by hydrochemical deposition; Inorganic Materials; Vol. 51, iss. 9

Bibliografske podrobnosti
Parent link:Inorganic Materials.— , 1965-
Vol. 51, iss. 9.— 2015.— [P. 884-890]
Korporativna značnica: Национальный исследовательский Томский политехнический университет Институт физики высоких технологий Лаборатория № 1
Drugi avtorji: Sofronova E. M. Elena Mikhaylovna, Starikov V. V. Vadim Vladimirovich, Sofronov D. S. Dmitry Semenovich, Kostenyukova E. I. Elena Igorevna, Lebedinsky A. M. Aleksey Mikhaylovich, Mateychenko P. V. Pavel Viktorovich
Izvleček:Title screen
Zinc selenide films have been produced by hydrochemical deposition through reaction between zinc oxide and selenium in the presence of hydrazine and sodium sulfite in an alkaline solution. Independent of deposition conditions, the films consist of sphalerite ZnSe and have a band gap in the range 2.6-2.7 eV. With increasing sodium sulfite concentration in solution, the average grain size increases to 0.75 μm (at Zn2+:SO 3 2− = 1: 10).
Режим доступа: по договору с организацией-держателем ресурса
Jezik:angleščina
Izdano: 2015
Teme:
Online dostop:http://dx.doi.org/10.1134/S0020168515080154
Format: Elektronski Book Chapter
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=648119

MARC

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200 1 |a Optical and electrical properties of ZnSe films grown by hydrochemical deposition  |f E. M. Sofronova [et al.] 
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320 |a [References: p. 890 (17 tit.)] 
330 |a Zinc selenide films have been produced by hydrochemical deposition through reaction between zinc oxide and selenium in the presence of hydrazine and sodium sulfite in an alkaline solution. Independent of deposition conditions, the films consist of sphalerite ZnSe and have a band gap in the range 2.6-2.7 eV. With increasing sodium sulfite concentration in solution, the average grain size increases to 0.75 μm (at Zn2+:SO 3 2− = 1: 10). 
333 |a Режим доступа: по договору с организацией-держателем ресурса 
461 |t Inorganic Materials  |d 1965- 
463 |t Vol. 51, iss. 9  |v [P. 884-890]  |d 2015 
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701 1 |a Sofronova  |b E. M.  |g Elena Mikhaylovna 
701 1 |a Starikov  |b V. V.  |g Vadim Vladimirovich 
701 1 |a Sofronov  |b D. S.  |g Dmitry Semenovich 
701 1 |a Kostenyukova  |b E. I.  |g Elena Igorevna 
701 1 |a Lebedinsky  |b A. M.  |c electrophysicist  |c Associate Scientist of Tomsk Polytechnic University, candidate of physico-mathematical Sciences  |f 1982-  |g Aleksey Mikhaylovich  |3 (RuTPU)RU\TPU\pers\36499  |9 19548 
701 1 |a Mateychenko  |b P. V.  |g Pavel Viktorovich 
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