Research of the creation opportunity of matrix X-ray gallium arsenide detector

Research of the creation opportunity of matrix X-ray gallium arsenide detector

Bibliographic Details
Parent link:International Siberian Conference on Control and Communications (SIBCON-2009), Russia, Tomsk, March 27−28, 2009.— 2009.— [P. 185-188]
Other Authors: Prokopyev D. G., Lelekov M. A., Duchko A. N. Andrey Nikolaevich, Yushenko A. Y.
Summary:Title screen
Preliminary accounts and experiments for clarification of the creation opportunity of matrix X-ray gallium arsenide detector with embed electronics were made. It is revealed, that efficiency of charge collection in this detector will be higher than the selenium prototype. Also it is revealed, that detector channel resistance can exceed 1000 GOhm, and storage capacitor and transistor closed channel resistance can be made higher than 100 GOhm that is essential and sufficient for proper circuit work.
Режим доступа: по договору с организацией-держателем ресурса
Language:English
Published: 2009
Subjects:
электронный ресурс
труды учёных ТПУ
Online Access:http://dx.doi.org/10.1109/SIBCON.2009.5044853
Format: Electronic Book Chapter
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=648003

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