Research of the creation opportunity of matrix X-ray gallium arsenide detector; International Siberian Conference on Control and Communications (SIBCON-2009), Russia, Tomsk, March 27−28, 2009
| Parent link: | International Siberian Conference on Control and Communications (SIBCON-2009), Russia, Tomsk, March 27−28, 2009.— 2009.— [P. 185-188] |
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| Muut tekijät: | , , , |
| Yhteenveto: | Title screen Preliminary accounts and experiments for clarification of the creation opportunity of matrix X-ray gallium arsenide detector with embed electronics were made. It is revealed, that efficiency of charge collection in this detector will be higher than the selenium prototype. Also it is revealed, that detector channel resistance can exceed 1000 GOhm, and storage capacitor and transistor closed channel resistance can be made higher than 100 GOhm that is essential and sufficient for proper circuit work. Режим доступа: по договору с организацией-держателем ресурса |
| Kieli: | englanti |
| Julkaistu: |
2009
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| Aiheet: | |
| Linkit: | http://dx.doi.org/10.1109/SIBCON.2009.5044853 |
| Aineistotyyppi: | Elektroninen Kirjan osa |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=648003 |