Silicon Carbide on Silicon (110): Surface Structure and Mechanisms of Epitaxial Growth; Russian Physics Journal; Vol. 56, iss. 12

Silicon Carbide on Silicon (110): Surface Structure and Mechanisms of Epitaxial Growth; Russian Physics Journal; Vol. 56, iss. 12

Bibliografske podrobnosti
Parent link:	Russian Physics Journal Vol. 56, iss. 12.— 2014.— [P. 1439-1444]
Korporativna značnica:	Национальный исследовательский Томский политехнический университет Физико-технический институт Кафедра экспериментальной физики
Drugi avtorji:	Sambonsuge Sh. Shota, Nikitina L. N. Larisa Nikolaevna, Hervieu Yu. Yu. Yuri Yurievich, Suemitsu M. Maki, Filimonov S. N. Sergey Nikolaevich
Izvleček:	Title screen Results of investigations of the SiC/Si growth from monomethylsilane are reported. Growth conditions favoring the rotated epitaxy of 3C-SiC(111) films on Si(110) are determined experimentally. Surface energies of clean and hydrogen covered 3C-SiC(110) and 3C-SiC(111) surfaces are calculated with the density functional theory approach. It is shown that the change of the 3C-SiC film orientation with decreasing surface temperature and increasing monomethylsilane pressure may be induced by a reduction of the surface energy anisotropy due to the surface passivation by hydrogen. Режим доступа: по договору с организацией-держателем ресурса
Jezik:	angleščina
Izdano:	2014
Teme:	электронный ресурс труды учёных ТПУ карбид кремния кремний поверхностная энергия
Online dostop:	http://dx.doi.org/10.1007/s11182-014-0197-7
Format:	Elektronski Book Chapter
KOHA link:	https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=647772

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