Silicon Carbide on Silicon (110): Surface Structure and Mechanisms of Epitaxial Growth; Russian Physics Journal; Vol. 56, iss. 12
| Parent link: | Russian Physics Journal Vol. 56, iss. 12.— 2014.— [P. 1439-1444] |
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| Autor kompanije: | |
| Daljnji autori: | , , , , |
| Sažetak: | Title screen Results of investigations of the SiC/Si growth from monomethylsilane are reported. Growth conditions favoring the rotated epitaxy of 3C-SiC(111) films on Si(110) are determined experimentally. Surface energies of clean and hydrogen covered 3C-SiC(110) and 3C-SiC(111) surfaces are calculated with the density functional theory approach. It is shown that the change of the 3C-SiC film orientation with decreasing surface temperature and increasing monomethylsilane pressure may be induced by a reduction of the surface energy anisotropy due to the surface passivation by hydrogen. Режим доступа: по договору с организацией-держателем ресурса |
| Jezik: | engleski |
| Izdano: |
2014
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| Teme: | |
| Online pristup: | http://dx.doi.org/10.1007/s11182-014-0197-7 |
| Format: | Elektronički Poglavlje knjige |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=647772 |
MARC
| LEADER | 00000naa0a2200000 4500 | ||
|---|---|---|---|
| 001 | 647772 | ||
| 005 | 20250214161258.0 | ||
| 035 | |a (RuTPU)RU\TPU\network\12928 | ||
| 090 | |a 647772 | ||
| 100 | |a 20160422d2014 k||y0rusy50 ba | ||
| 101 | 0 | |a eng | |
| 102 | |a US | ||
| 135 | |a arcn ---uucaa | ||
| 181 | 0 | |a i | |
| 182 | 0 | |a b | |
| 200 | 1 | |a Silicon Carbide on Silicon (110): Surface Structure and Mechanisms of Epitaxial Growth |f Sh. Sambonsuge [et al.] | |
| 203 | |a Text |c electronic | ||
| 300 | |a Title screen | ||
| 320 | |a [References: 20 tit.] | ||
| 330 | |a Results of investigations of the SiC/Si growth from monomethylsilane are reported. Growth conditions favoring the rotated epitaxy of 3C-SiC(111) films on Si(110) are determined experimentally. Surface energies of clean and hydrogen covered 3C-SiC(110) and 3C-SiC(111) surfaces are calculated with the density functional theory approach. It is shown that the change of the 3C-SiC film orientation with decreasing surface temperature and increasing monomethylsilane pressure may be induced by a reduction of the surface energy anisotropy due to the surface passivation by hydrogen. | ||
| 333 | |a Режим доступа: по договору с организацией-держателем ресурса | ||
| 461 | |t Russian Physics Journal | ||
| 463 | |t Vol. 56, iss. 12 |v [P. 1439-1444] |d 2014 | ||
| 610 | 1 | |a электронный ресурс | |
| 610 | 1 | |a труды учёных ТПУ | |
| 610 | 1 | |a карбид кремния | |
| 610 | 1 | |a кремний | |
| 610 | 1 | |a поверхностная энергия | |
| 701 | 1 | |a Sambonsuge |b Sh. |g Shota | |
| 701 | 1 | |a Nikitina |b L. N. |c physicist |c associate Professor of Tomsk Polytechnic University, candidate of physico-mathematical Sciences |f 1978- |g Larisa Nikolaevna |3 (RuTPU)RU\TPU\pers\36237 |9 19314 | |
| 701 | 1 | |a Hervieu |b Yu. Yu. |g Yuri Yurievich | |
| 701 | 0 | |a Suemitsu |b M. |g Maki | |
| 701 | 1 | |a Filimonov |b S. N. |g Sergey Nikolaevich | |
| 712 | 0 | 2 | |a Национальный исследовательский Томский политехнический университет |b Физико-технический институт |b Кафедра экспериментальной физики |3 (RuTPU)RU\TPU\col\21255 |9 27946 |
| 801 | 2 | |a RU |b 63413507 |c 20160422 |g RCR | |
| 856 | 4 | |u http://dx.doi.org/10.1007/s11182-014-0197-7 | |
| 942 | |c CF | ||