Silicon Carbide on Silicon (110): Surface Structure and Mechanisms of Epitaxial Growth
| Parent link: | Russian Physics Journal Vol. 56, iss. 12.— 2014.— [P. 1439-1444] |
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| Korporativní autor: | |
| Další autoři: | , , , , |
| Shrnutí: | Title screen Results of investigations of the SiC/Si growth from monomethylsilane are reported. Growth conditions favoring the rotated epitaxy of 3C-SiC(111) films on Si(110) are determined experimentally. Surface energies of clean and hydrogen covered 3C-SiC(110) and 3C-SiC(111) surfaces are calculated with the density functional theory approach. It is shown that the change of the 3C-SiC film orientation with decreasing surface temperature and increasing monomethylsilane pressure may be induced by a reduction of the surface energy anisotropy due to the surface passivation by hydrogen. Режим доступа: по договору с организацией-держателем ресурса |
| Vydáno: |
2014
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| Témata: | |
| On-line přístup: | http://dx.doi.org/10.1007/s11182-014-0197-7 |
| Médium: | Elektronický zdroj Kapitola |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=647772 |
| Shrnutí: | Title screen Results of investigations of the SiC/Si growth from monomethylsilane are reported. Growth conditions favoring the rotated epitaxy of 3C-SiC(111) films on Si(110) are determined experimentally. Surface energies of clean and hydrogen covered 3C-SiC(110) and 3C-SiC(111) surfaces are calculated with the density functional theory approach. It is shown that the change of the 3C-SiC film orientation with decreasing surface temperature and increasing monomethylsilane pressure may be induced by a reduction of the surface energy anisotropy due to the surface passivation by hydrogen. Режим доступа: по договору с организацией-держателем ресурса |
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| DOI: | 10.1007/s11182-014-0197-7 |