The structure and properties of boron carbide ceramics modified by high-current pulsed electron-beam; AIP Conference Proceedings; Vol. 1698 : Advanced Materials in Technology and Construction, AMTC-2015
| Parent link: | AIP Conference Proceedings Vol. 1698 : Advanced Materials in Technology and Construction, AMTC-2015.— 2016.— [030008, 9 p.] |
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| Corporate Author: | |
| Other Authors: | , , , , , , |
| Summary: | Title screen The present work is devoted to numerical simulation of temperature fields and the analysis of structural and strength properties of the samples surface layer of boron carbide ceramics treated by the high-current pulsed electron-beam of the submillisecond duration. The samples made of sintered boron carbide ceramics are used in these investigations. The problem of calculating the temperature field is reduced to solving the thermal conductivity equation. The electron beam density ranges between 8…30 J/cm2, while the pulse durations are 100…200 μs in numerical modelling. The results of modelling the temperature field allowed ascertaining the threshold parameters of the electron beam, such as energy density and pulse duration. The electron beam irradiation is accompanied by the structural modification of the surfacelayer of boron carbide ceramics either in the single-phase (liquid or solid) or two-phase (solid-liquid) states. The sample surface of boron carbide ceramics is treated under the two-phase state (solid-liquid) conditions of the structural modification. The surface layer is modified by the high-current pulsed electron-beam produced by SOLO installation at the Institute of High Current Electronics of the Siberian Branch of the Russian Academy of Sciences, Tomsk, Russia. The elemental composition and the defect structure of the modified surface layer are analyzed by the optical instrument, scanning electron and transmission electron microscopes. Mechanical properties of the modified layer are determined measuring its hardnessand crack resistance. Research results show that the melting and subsequent rapid solidification of thesurface layer lead to such phenomena as fragmentation due to a crack network, grain size reduction, formation of the sub-grained structure due to mechanical twinning, and increase of hardness and crack resistance. Режим доступа: по договору с организацией-держателем ресурса |
| Language: | English |
| Published: |
2016
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| Subjects: | |
| Online Access: | http://dx.doi.org/10.1063/1.4937830 |
| Format: | Electronic Book Chapter |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=647499 |
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| 200 | 1 | |a The structure and properties of boron carbide ceramics modified by high-current pulsed electron-beam |f Yu. F. Ivanov [et al.] | |
| 203 | |a Text |c electronic | ||
| 300 | |a Title screen | ||
| 320 | |a [References: 8 tit.] | ||
| 330 | |a The present work is devoted to numerical simulation of temperature fields and the analysis of structural and strength properties of the samples surface layer of boron carbide ceramics treated by the high-current pulsed electron-beam of the submillisecond duration. The samples made of sintered boron carbide ceramics are used in these investigations. The problem of calculating the temperature field is reduced to solving the thermal conductivity equation. The electron beam density ranges between 8…30 J/cm2, while the pulse durations are 100…200 μs in numerical modelling. The results of modelling the temperature field allowed ascertaining the threshold parameters of the electron beam, such as energy density and pulse duration. The electron beam irradiation is accompanied by the structural modification of the surfacelayer of boron carbide ceramics either in the single-phase (liquid or solid) or two-phase (solid-liquid) states. The sample surface of boron carbide ceramics is treated under the two-phase state (solid-liquid) conditions of the structural modification. The surface layer is modified by the high-current pulsed electron-beam produced by SOLO installation at the Institute of High Current Electronics of the Siberian Branch of the Russian Academy of Sciences, Tomsk, Russia. The elemental composition and the defect structure of the modified surface layer are analyzed by the optical instrument, scanning electron and transmission electron microscopes. Mechanical properties of the modified layer are determined measuring its hardnessand crack resistance. Research results show that the melting and subsequent rapid solidification of thesurface layer lead to such phenomena as fragmentation due to a crack network, grain size reduction, formation of the sub-grained structure due to mechanical twinning, and increase of hardness and crack resistance. | ||
| 333 | |a Режим доступа: по договору с организацией-держателем ресурса | ||
| 461 | 1 | |0 (RuTPU)RU\TPU\network\4816 |t AIP Conference Proceedings | |
| 463 | 1 | |t Vol. 1698 : Advanced Materials in Technology and Construction, AMTC-2015 |o II All-Russian Scientific Conference of Young Scientists, 6-9 October 2015 |f Tomsk State University of Architecture and Building (TSUAB); ed. S. V. Starenchenko ; Yu. V. Solov'eva ; N. O. Kopanitsa |v [030008, 9 p.] |d 2016 | |
| 610 | 1 | |a электронный ресурс | |
| 610 | 1 | |a труды учёных ТПУ | |
| 701 | 1 | |a Ivanov |b Yu. F. |c physicist |c Professor of Tomsk Polytechnic University, Doctor of physical and mathematical sciences |f 1955- |g Yuriy Fedorovich |3 (RuTPU)RU\TPU\pers\33559 | |
| 701 | 1 | |a Tolkachev |b O. S. |c Chemical Engineer |c technician of Tomsk Polytechnic University |f 1990- |g Oleg Sergeevich |3 (RuTPU)RU\TPU\pers\34581 | |
| 701 | 1 | |a Petyukevich |b M. S. |c Specialist in the field of material science |c Engineer of Tomsk Polytechnic University |f 1982- |g Mariya Stanislavovna |3 (RuTPU)RU\TPU\pers\35551 |9 18732 | |
| 701 | 1 | |a Teresov |b A. D. |g Anton Dmitrievich | |
| 701 | 1 | |a Ivanova |b O. V. |g Olga Viktorovna | |
| 701 | 1 | |a Ikonnikova |b I. A. |g Irina Aleksandrovna | |
| 701 | 1 | |a Polisadova |b V. V. |c Chemical Engineer |c engineer-researcher of Tomsk Polytechnic University |f 1947- |g Valentina Valentinovna |3 (RuTPU)RU\TPU\pers\34598 | |
| 712 | 0 | 2 | |a Национальный исследовательский Томский политехнический университет |c (2009- ) |9 26305 |
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