Angular distribution of the soft component of radiation from relativistic electrons near planar orientation in thick single crystals; Russian Physics Journal; Vol. 34, iss. 6
| Parent link: | Russian Physics Journal Vol. 34, iss. 6.— 1991.— [P. 527-534] |
|---|---|
| অন্যান্য লেখক: | Amosov K. Yu., Andreyashkin M. Yu., Vnukov I. E., Kalinin B. N., Naumenko G. A. Gennadiy Andreevich, Potylitsyn A. P. Alexander Petrovich, Sarychev V. P. |
| সংক্ষিপ্ত: | Title screen The Tomsk synchrotron has been used to carry out an experimental study of the soft component (ω≲30 MeV) of the radiation from relativistic electrons in diamond, silicon, and tungsten single crystals. It is shown that a component of the radiation associated with channeling emission from electrons trapped inside the crystal can be distinguished because of angular selection. It is found that the linear density of the radiation from the electrons which must be trapped in planar channeling inside the crystal because of multiple scattering is substantially reduced in comparison with the linear density of the radiation from electrons trapped in this regime in the surface layer of the crystal. It is shown that the "quasirefraction" of an electron beam by the planar potential in thick single crystals leads to "effective reflection" of electrons. Режим доступа: по договору с организацией-держателем ресурса |
| ভাষা: | ইংরেজি |
| প্রকাশিত: |
1991
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| বিষয়গুলি: | |
| অনলাইন ব্যবহার করুন: | http://dx.doi.org/10.1007/BF00895884 |
| বিন্যাস: | বৈদ্যুতিক গ্রন্থের অধ্যায় |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=647214 |
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অনুরূপ উপাদানগুলি
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Orbital angular momentum of radiation from relativistic planar channeled in Si crystal electrons; Physics Letters A; Vol. 451
অনুযায়ী: Bogdanov O. V. Oleg Viktorovich
প্রকাশিত: (2022) -
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