Selective deposition of polycrystalline diamond films using photolithography with addition of nanodiamonds as nucleation centers; IOP Conference Series: Materials Science and Engineering; Vol. 116 : Advanced Materials and New Technologies in Modern Materials Science
| Parent link: | IOP Conference Series: Materials Science and Engineering Vol. 116 : Advanced Materials and New Technologies in Modern Materials Science.— 2016.— [012001, 6 p.] |
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| Співавтор: | |
| Інші автори: | , , , , , |
| Резюме: | Title screen A new method of selective deposition of polycrystalline diamond has been developed and studied. The diamond coatings with a complex, predetermined geometry and resolution up to 5 [mu]m were obtained. A high density of polycrystallites in the coating area was reached (up to 32·10{7} pcs/cm{2}). The uniformity of the film reached 100%, and the degree of the surface contamination by parasitic crystals did not exceed 2%. The technology was based on the application of the standard photolithography with an addition of nanodiamond suspension into the photoresist that provided the creation of the centers of further nucleation in the areas which require further overgrowth. The films were deposited onto monocrystalline silicon substrates using the method of "hot filaments" in the CVD reactor. The properties of the coating and the impact of the nanodiamond suspension concentration in the photoresist were also studied. The potential use of the given method includes a high resolution, technological efficiency, and low labor costs compared to the standard methods (laser treatment, chemical etching in aggressive environments). Режим доступа: по договору с организацией-держателем ресурса |
| Мова: | Англійська |
| Опубліковано: |
2016
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| Предмети: | |
| Онлайн доступ: | http://dx.doi.org/10.1088/1757-899X/116/1/012001 http://earchive.tpu.ru/handle/11683/18925 |
| Формат: | Електронний ресурс Частина з книги |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=647092 |
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| 200 | 1 | |a Selective deposition of polycrystalline diamond films using photolithography with addition of nanodiamonds as nucleation centers |f V. V. Okhotnikov [et al.] | |
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| 320 | |a [References: 11 tit.] | ||
| 330 | |a A new method of selective deposition of polycrystalline diamond has been developed and studied. The diamond coatings with a complex, predetermined geometry and resolution up to 5 [mu]m were obtained. A high density of polycrystallites in the coating area was reached (up to 32·10{7} pcs/cm{2}). The uniformity of the film reached 100%, and the degree of the surface contamination by parasitic crystals did not exceed 2%. The technology was based on the application of the standard photolithography with an addition of nanodiamond suspension into the photoresist that provided the creation of the centers of further nucleation in the areas which require further overgrowth. The films were deposited onto monocrystalline silicon substrates using the method of "hot filaments" in the CVD reactor. The properties of the coating and the impact of the nanodiamond suspension concentration in the photoresist were also studied. The potential use of the given method includes a high resolution, technological efficiency, and low labor costs compared to the standard methods (laser treatment, chemical etching in aggressive environments). | ||
| 333 | |a Режим доступа: по договору с организацией-держателем ресурса | ||
| 461 | 0 | |0 (RuTPU)RU\TPU\network\2008 |t IOP Conference Series: Materials Science and Engineering | |
| 463 | 0 | |0 (RuTPU)RU\TPU\network\11962 |t Vol. 116 : Advanced Materials and New Technologies in Modern Materials Science |o International Conference, 9–11 November 2015, Tomsk, Russia |o [proceedings] |v [012001, 6 p.] |d 2016 | |
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| 701 | 1 | |a Okhotnikov |b V. V. |c physicist |c engineer of Tomsk Polytechnic University |f 1992- |g Vitaly Vladimirovich |3 (RuTPU)RU\TPU\pers\36453 | |
| 701 | 1 | |a Linnik |b S. A. |c physicist |c Engineer-Researcher of Tomsk Polytechnic University |f 1985- |g Stepan Andreevich |3 (RuTPU)RU\TPU\pers\32877 |9 16725 | |
| 701 | 1 | |a Gaydaychuk |b A. V. |c physicist |c Postgraduate, Engineer - Researcher of Tomsk Polytechnic University |f 1984- |g Alexander Valerievich |3 (RuTPU)RU\TPU\pers\32876 |9 16724 | |
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| 701 | 1 | |a Nazarova |b G. Yu. | |
| 701 | 1 | |a Yurchenko |b V. I. | |
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