Deterioration of Watt and Voltage Characteristics of AlGaInP Heterostructures under Irradiation by Fast Neutrons; IOP Conference Series: Materials Science and Engineering; Vol. 110 : Radiation-Thermal Effects and Processes in Inorganic Materials (RTEP2015)

Библиографические подробности
Источник:IOP Conference Series: Materials Science and Engineering
Vol. 110 : Radiation-Thermal Effects and Processes in Inorganic Materials (RTEP2015).— 2016.— [012026, 5 p.]
Главный автор: Gradoboev A. V. Aleksandr Vasilyevich
Автор-организация: Национальный исследовательский Томский политехнический университет (ТПУ) Юргинский технологический институт (филиал) (ЮТИ) Кафедра безопасности жизнедеятельности, экологии и физического воспитания (БЖДЭФВ)
Другие авторы: Orlova K. N. Kseniya Nikolaevna
Примечания:Title screen
The paper presents the results of studying characteristic deterioration of AlGaInP heterostructures with multiple quantum wells. The research was completed for light emitting diodes (emission wavelengths 623 nm and 590 nm) under fast neutron irradiation in passive mode. It has been revealed that the change in emission power and operating current under irradiation is conditioned by band gap and level of electron injection. Here, the change of current flowing mechanism is a distinctive parameter of the boundary between the first and second stages of emission power reduction caused by fast neutron irradiation of AlGaInP heterostructures ([lambda]=625 nm).
Режим доступа: по договору с организацией-держателем ресурса
Язык:английский
Опубликовано: 2016
Предметы:
Online-ссылка:http://dx.doi.org/10.1088/1757-899X/110/1/012026
http://earchive.tpu.ru/handle/11683/18064
Формат: MixedMaterials Электронный ресурс Статья
Запись в KOHA:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=647005

MARC

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330 |a The paper presents the results of studying characteristic deterioration of AlGaInP heterostructures with multiple quantum wells. The research was completed for light emitting diodes (emission wavelengths 623 nm and 590 nm) under fast neutron irradiation in passive mode. It has been revealed that the change in emission power and operating current under irradiation is conditioned by band gap and level of electron injection. Here, the change of current flowing mechanism is a distinctive parameter of the boundary between the first and second stages of emission power reduction caused by fast neutron irradiation of AlGaInP heterostructures ([lambda]=625 nm). 
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