Investigation of Changing Volt-Ampere Characteristics of AlGaInP Heterostructures with Multiple Quantum Wells under Ionizing Radiation; IOP Conference Series: Materials Science and Engineering; Vol. 110 : Radiation-Thermal Effects and Processes in Inorganic Materials (RTEP2015)
| Parent link: | IOP Conference Series: Materials Science and Engineering Vol. 110 : Radiation-Thermal Effects and Processes in Inorganic Materials (RTEP2015).— 2016.— [012025, 5 p.] |
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| Shrnutí: | Title screen The results of research into degradation of volt-ampere characteristics of light emitting diodes produced on the base of AlGaInP heterostructures with multiple quantum wells are presented on the example of light emitting diodes (emission wavelengths 623 nm and 590 nm) under gamma quantum and fast neutron radiation in passive powering mode. The shifts of volt-ampere characteristics into the higher voltage range have been observed in conditions of increasing neutron fluence and radiation dose. The observed increase in the resistance of ohmic contacts is caused by the rising resistance of adjacent area, which in its turn results from the changing mobility of charge carriers. The latter varies with the growth of introduced defects under irradiation. Two different areas of current generation have been identified. A mechanism of current generation depends on injected charge carriers in the range of mid-level electron injection. Moreover, the range of high electron injection is distinguished by changing resistance of light emitting diode cores alongside with current generation conditioned by charge carrier injection. Режим доступа: по договору с организацией-держателем ресурса |
| Jazyk: | angličtina |
| Vydáno: |
2016
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| On-line přístup: | http://dx.doi.org/10.1088/1757-899X/110/1/012025 http://earchive.tpu.ru/handle/11683/18063 |
| Médium: | Elektronický zdroj Kapitola |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=647003 |
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| 200 | 1 | |a Investigation of Changing Volt-Ampere Characteristics of AlGaInP Heterostructures with Multiple Quantum Wells under Ionizing Radiation |f А. V. Gradoboev, K. N. Orlova | |
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| 300 | |a Title screen | ||
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| 330 | |a The results of research into degradation of volt-ampere characteristics of light emitting diodes produced on the base of AlGaInP heterostructures with multiple quantum wells are presented on the example of light emitting diodes (emission wavelengths 623 nm and 590 nm) under gamma quantum and fast neutron radiation in passive powering mode. The shifts of volt-ampere characteristics into the higher voltage range have been observed in conditions of increasing neutron fluence and radiation dose. The observed increase in the resistance of ohmic contacts is caused by the rising resistance of adjacent area, which in its turn results from the changing mobility of charge carriers. The latter varies with the growth of introduced defects under irradiation. Two different areas of current generation have been identified. A mechanism of current generation depends on injected charge carriers in the range of mid-level electron injection. Moreover, the range of high electron injection is distinguished by changing resistance of light emitting diode cores alongside with current generation conditioned by charge carrier injection. | ||
| 333 | |a Режим доступа: по договору с организацией-держателем ресурса | ||
| 461 | 0 | |0 (RuTPU)RU\TPU\network\2008 |t IOP Conference Series: Materials Science and Engineering | |
| 463 | 0 | |0 (RuTPU)RU\TPU\network\11965 |t Vol. 110 : Radiation-Thermal Effects and Processes in Inorganic Materials (RTEP2015) |o International Scientific Conference, 31 August to 10 September 2015, Tomsk, Russia |o [proceedings] |v [012025, 5 p.] |d 2016 | |
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| 700 | 1 | |a Gradoboev |b A. V. |c physicist |c Professor of Yurga technological Institute of Tomsk Polytechnic University, Doctor of technical sciences |f 1952- |g Aleksandr Vasilyevich |2 stltpush |3 (RuTPU)RU\TPU\pers\34242 |9 17773 | |
| 701 | 1 | |a Orlova |b K. N. |c physicist |c Associate Professor of Yurga technological Institute of Tomsk Polytechnic University, Candidate of technical sciences |f 1985- |g Kseniya Nikolaevna |2 stltpush |3 (RuTPU)RU\TPU\pers\33587 |9 17245 | |
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