The Influence of High-Power Ion Beams and High-Intensity Short-Pulse Implantation of Ions on the Properties of Ceramic Silicon Carbide; IOP Conference Series: Materials Science and Engineering; Vol. 110 : Radiation-Thermal Effects and Processes in Inorganic Materials (RTEP2015)

Détails bibliographiques
Parent link:	IOP Conference Series: Materials Science and Engineering Vol. 110 : Radiation-Thermal Effects and Processes in Inorganic Materials (RTEP2015).— 2016.— [012006, 5 p.]
Collectivités auteurs:	Национальный исследовательский Томский политехнический университет (ТПУ) Энергетический институт (ЭНИН) Кафедра электроснабжения промышленных предприятий (ЭПП), Национальный исследовательский Томский политехнический университет (ТПУ) Институт физики высоких технологий (ИФВТ) Лаборатория № 1
Autres auteurs:	Kabyshev A. V. Alexander Vasilievich, Konusov F. V. Fedor Valerievich, Pavlov S. K. Sergey Konstantinovich, Remnev G. E. Gennady Efimovich
Résumé:	Title screen The paper is focused on the study of the structural, electrical and optical characteristics of the ceramic silicon carbide before and after irradiation in the regimes of the high-power ion beams (HPIB) and high-intensity short-pulse implantation (HISPI) of carbon ions. The dominant mechanism of transport of charge carriers, their type and the energy spectrum of localized states (LS) of defects determining the properties of SiC were established. Electrical and optical characteristics of ceramic before and after irradiation are determined by the biographical and radiation defects whose band gap (BG) energy levels have a continuous energetic distribution. A dominant p-type activation component of conduction with participation of shallow acceptor levels 0.05-0.16 eV is complemented by hopping mechanism of conduction involving the defects LS with a density of 1.2T0{17}-2.4T0{18} eV{-}Am{-3} distributed near the Fermi level.The effect of radiation defects with deep levels in the BG on properties change dominates after HISPI. A new material with the changed electronic structure and properties is formed in the near surface layer of SiC after the impact of the HPIB. Режим доступа: по договору с организацией-держателем ресурса
Langue:	anglais
Publié:	2016
Sujets:	электронный ресурс труды учёных ТПУ мощности пучки ионы короткие импульсы имплантация ионов карбид кремния структурные характеристики электрические характеристики оптические характеристики
Accès en ligne:	http://dx.doi.org/10.1088/1757-899X/110/1/012006 http://earchive.tpu.ru/handle/11683/18073
Format:	Électronique Chapitre de livre
KOHA link:	https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=646991