Deposition of barrier layers of titanium nitride using dual magnetron; Известия вузов. Физика; V. 58, № 9-3

Bibliographische Detailangaben
Parent link:Известия вузов. Физика/ Национальный исследовательский Томский государственный университет (ТГУ).— , 1958-
V. 58, № 9-3.— 2015.— [P. 47-50]
1. Verfasser: Yuriev Yu. N. Yuri Nikolaevich
Körperschaft: Томский политехнический университет
Weitere Verfasser: Sidelev D. V. Dmitry Vladimirovich, Kiseleva D. V. Darjya Vasiljevna
Zusammenfassung:Title screen
This article presents original research of electrical and mechanical properties, phase structure of TiN thin films depending on deposition conditions. It is determined that optimal operation conditions are minimal value of «target-substrate» distance ( d s-t = 50 mm) and N 2 flow rate at 20-35 sccm. TiN films with (111)-crystallographic direction have a low level of microstrains. The minimal value of resistivity of TiN samples is 0.15 mOm•cm. TiN films can be used as barrier layers of integral microelectronic schemes for exclusion of diffusion of copper layer in insulator layer and subsequent corrosion.
Режим доступа: по договору с организацией-держателем ресурса
Sprache:Englisch
Veröffentlicht: 2015
Schlagworte:
Online-Zugang:http://elibrary.ru/item.asp?id=25225091
Format: Elektronisch Buchkapitel
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=646748

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