Deposition of barrier layers of titanium nitride using dual magnetron; Известия вузов. Физика; V. 58, № 9-3

Deposition of barrier layers of titanium nitride using dual magnetron; Известия вузов. Физика; V. 58, № 9-3

Bibliographic Details
Parent link:Известия вузов. Физика/ Национальный исследовательский Томский государственный университет (ТГУ).— , 1958-
V. 58, № 9-3.— 2015.— [P. 47-50]
Main Author: Yuriev Yu. N. Yuri Nikolaevich
Corporate Author: Томский политехнический университет
Other Authors: Sidelev D. V. Dmitry Vladimirovich, Kiseleva D. V. Darjya Vasiljevna
Summary:Title screen
This article presents original research of electrical and mechanical properties, phase structure of TiN thin films depending on deposition conditions. It is determined that optimal operation conditions are minimal value of «target-substrate» distance ( d s-t = 50 mm) and N 2 flow rate at 20-35 sccm. TiN films with (111)-crystallographic direction have a low level of microstrains. The minimal value of resistivity of TiN samples is 0.15 mOm•cm. TiN films can be used as barrier layers of integral microelectronic schemes for exclusion of diffusion of copper layer in insulator layer and subsequent corrosion.
Режим доступа: по договору с организацией-держателем ресурса
Language:English
Published: 2015
Subjects:
электронный ресурс
труды учёных ТПУ
барьерные слои
нитрид титана
магнетронное распыление
тонкие пленки
удельное сопротивление
Online Access:http://elibrary.ru/item.asp?id=25225091
Format: Electronic Book Chapter
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=646748

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