Deposition of barrier layers of titanium nitride using dual magnetron; Известия вузов. Физика; V. 58, № 9-3
| Parent link: | Известия вузов. Физика/ Национальный исследовательский Томский государственный университет (ТГУ).— , 1958- V. 58, № 9-3.— 2015.— [P. 47-50] |
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| Diğer Yazarlar: | , |
| Özet: | Title screen This article presents original research of electrical and mechanical properties, phase structure of TiN thin films depending on deposition conditions. It is determined that optimal operation conditions are minimal value of «target-substrate» distance ( d s-t = 50 mm) and N 2 flow rate at 20-35 sccm. TiN films with (111)-crystallographic direction have a low level of microstrains. The minimal value of resistivity of TiN samples is 0.15 mOm•cm. TiN films can be used as barrier layers of integral microelectronic schemes for exclusion of diffusion of copper layer in insulator layer and subsequent corrosion. Режим доступа: по договору с организацией-держателем ресурса |
| Dil: | İngilizce |
| Baskı/Yayın Bilgisi: |
2015
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| Online Erişim: | http://elibrary.ru/item.asp?id=25225091 |
| Materyal Türü: | Elektronik Kitap Bölümü |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=646748 |
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| 200 | 1 | |a Deposition of barrier layers of titanium nitride using dual magnetron |f Yu. N. Yuriev, D. V. Sidelev, D. V. Kiseleva | |
| 203 | |a Text |c electronic | ||
| 300 | |a Title screen | ||
| 320 | |a [References: p. 50 (13 tit.)] | ||
| 330 | |a This article presents original research of electrical and mechanical properties, phase structure of TiN thin films depending on deposition conditions. It is determined that optimal operation conditions are minimal value of «target-substrate» distance ( d s-t = 50 mm) and N 2 flow rate at 20-35 sccm. TiN films with (111)-crystallographic direction have a low level of microstrains. The minimal value of resistivity of TiN samples is 0.15 mOm•cm. TiN films can be used as barrier layers of integral microelectronic schemes for exclusion of diffusion of copper layer in insulator layer and subsequent corrosion. | ||
| 333 | |a Режим доступа: по договору с организацией-держателем ресурса | ||
| 461 | |t Известия вузов. Физика |f Национальный исследовательский Томский государственный университет (ТГУ) |d 1958- | ||
| 463 | |t V. 58, № 9-3 |v [P. 47-50] |d 2015 | ||
| 610 | 1 | |a электронный ресурс | |
| 610 | 1 | |a труды учёных ТПУ | |
| 610 | 1 | |a барьерные слои | |
| 610 | 1 | |a нитрид титана | |
| 610 | 1 | |a магнетронное распыление | |
| 610 | 1 | |a тонкие пленки | |
| 610 | 1 | |a удельное сопротивление | |
| 700 | 1 | |a Yuriev |b Yu. N. |c specialist in the field of hydrogen energy |c Head of the laboratory of Tomsk Polytechnic University, Associate Scientist |f 1984- |g Yuri Nikolaevich |3 (RuTPU)RU\TPU\pers\31508 |9 15669 | |
| 701 | 1 | |a Sidelev |b D. V. |c physicist |c Associate Professor of Tomsk Polytechnic University, Candidate of Technical Sciences |f 1991- |g Dmitry Vladimirovich |y Tomsk |3 (RuTPU)RU\TPU\pers\34524 |9 17905 | |
| 701 | 1 | |a Kiseleva |b D. V. |g Darjya Vasiljevna | |
| 712 | 0 | 2 | |a Томский политехнический университет |c 1991- |7 ca |8 rus |9 26305 |
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